Databook.fxp 1/13/99 2:09 PM Page F-32 F-32 01/99 NJ132 Process Silicon Junction Field-Effect Transistor ¥ High Speed Switch ¥ Low-Noise Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts S-D 10 mA +150°C – 65°C to +175°C S-D Devices in this Databook based on the NJ132 Process. Datasheet Datasheet 2N4391, 2N4392 2N4393 2N4856, 2N4857 2N4858, 2N4859 2N4860, 2N4861 2N4856A, 2N4857A 2N4858A, 2N4859A 2SK113 IFN113 2N4860A, 2N4861A J111, J112 J113 G Die Size = 0.022" X 0.022" All Bond Pads = 0.004" Sq. Substrate is also Gate. At 25°C free air temperature: NJ132 Process Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Reverse Gate Leakage Current IGSS Drain Saturation Current (Pulsed) IDSS Gate Source Cutoff Voltage VGS(OFF) Min Typ – 30 – 45 Max Unit Test Conditions V IG = – 1 µA, VDS = ØV – 100 pA VGS = – 20V, VDS = ØV 10 150 mA VDS = 20V, VGS = ØV – 0.5 –7 V VDS = 20V, ID = 1 nA – 10 Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) 25 Ω ID = 1 mA, VGSS = ØV f = 1 kHz Input Capacitance Ciss 12 pF VDS = 20V, VGS = ØV f = 1 MHz Feedback Capacitance Ciss 2.5 pF VDS = ØV, VGS = – 10V f = 1 MHz Turn On Delay Time td(on) 6 ns Rise Time tr 5 ns Turn Off Delay Time td(off) 50 ns VDD = – 10V, ID = 10 mA RL = 10V, VGS(ON) = ØV VGS(OFF) = – 6V 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page F-33 F-33 01/99 NJ132 Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS Gfs as a Function of VGS(OFF) VGS(OFF) = Ð4.5 V 40 100 Transconductance in mS Drain Current in mA VGS = Ø V 80 VGS = –1 V 60 VGS = –2 V 40 VGS = –3 V 20 VGS = –4 V 5 10 15 10 0 –2 –4 –6 –8 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) IDSS as a Function of RDS 150 60 100 50 50 40 30 20 10 0 –1 –2 –3 –4 –5 –6 0 –7 20 40 60 80 100 120 Drain Source Cutoff Voltage in Volts Drain Saturation Current in mA Input Capacitance as a Function of VGS Feedback Capacitance as a Function of VGS 140 20 Feedback Capacitance in pF 20 Input Capacitance in pF 20 20 Drain Source Resistance in Ω Drain Saturation Current in mA 0 30 VDS = Ø V 16 VDS = 15 V 12 8 4 0 –4 –8 – 12 – 16 Gate Source Voltage in Volts – 20 16 12 8 VDS = Ø V 4 0 –4 –8 – 12 – 16 Gate Source Voltage in Volts – 20