Databook.fxp 1/13/99 2:09 PM Page F-26 F-26 01/99 NJ72 Process Silicon Junction Field-Effect Transistor ¥ VHF/UHF Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C S-D Devices in this Databook based on the NJ72 Process. Datasheet Datasheet IFN5564, IFN5565 IFN5566 J308, J309 J308, J309 J310 U308, U309 U430, U431 VCR2N S-D G Die Size = 0.020" X 0.020" All Bond Pads = 0.004" Sq. Substrate is also Gate. At 25°C free air temperature: NJ72 Process Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Reverse Gate Leakage Current IGSS Drain Saturation Current (Pulsed) IDSS Gate Source Cutoff Voltage VGS(OFF) Min Typ – 25 – 40 Max Unit Test Conditions V IG = – 1 µA, VDS = ØV – 100 pA VGS = – 15V, VDS = ØV 5 90 mA VDS = 15V, VGS = ØV –1 – 5.5 V VDS = 15V, ID = 1 nA – 10 Dynamic Electrical Characteristics Forward Transconductance gfs 22 mS VDS = 15V, VGS = ØV f = 1 kHz Drain Source ON Resistance rds(on) 40 Ω ID = 1 mA, VGS = ØV f = 1 kHz Input Capacitance Ciss 6.5 pF VDS = ØV, VGS = – 10V f = 1 MHz Feedback Capacitance Crss 2.5 pF VDS = ØV, VGS = – 10V f = 1 MHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page F-27 F-27 01/99 NJ72 Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS Gfs as a Function of VGS(OFF) VGS(OFF) = Ð2.3 V 25 25 Transconductance in mS Drain Current in mA VGS = Ø V 20 VGS = – 0.5 V 15 VGS = –1.0 V 10 VGS = –1.5 V 5 VGS = –2.0 V 5 10 15 10 5 0 –1 –2 –3 –4 –5 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) Rds as a Function of VGS(OFF) 100 80 60 40 20 0 –1 –2 –3 –4 –5 –6 80 70 60 50 40 30 20 10 –6 0 –1 –2 –3 –4 –5 Drain Source Cutoff Voltage in Volts Drain Source Cutoff Voltage in Volts Input Capacitance as a Function of VGS Feedback Capacitance as a Function of VGS –6 7 Feedback Capacitance in pF 15 Input Capacitance in pF 15 20 Drain Source (on) Resistance in Ω Drain Saturation Current in mA 0 20 13 VDS = Ø V 11 VDS = 5 V 9 VDS = 10 V 7 5 6 VDS = Ø V 5 VDS = 5 V 4 VDS = 10 V 3 2 0 –4 –8 – 12 Gate Source Voltage in Volts – 16 0 –4 –8 – 12 Gate Source Voltage in Volts – 16