Databook.fxp 1/13/99 2:09 PM Page F-40 F-40 01/99 NJ903 Process Silicon Junction Field-Effect Transistor ¥ Analog Switch ¥ Digital Switch ¥ Low-Noise Amplifier G D-S S-D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C Devices in this Databook based on the NJ903 Process. S-D Datasheet D-S G IFN5432 IFN5433 IFN5434 Die Size = 0.040" X 0.040" All Bond Pads = 0.004" Sq. Substrate is also Gate. At 25°C free air temperature: NJ903 Process Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Reverse Gate Leakage Current IGSS Drain Saturation Current (Pulsed) IDSS Gate Source Cutoff Voltage VGS(OFF) Min Typ – 25 – 40 Max Unit Test Conditions V IG = – 1 µA, VDS = ØV –1 nA VGS = – 15V, VDS = ØV 100 900 mA VDS = 10V, VGS = ØV –2 –7 V VDS = 10V, ID = 1 nA – 0.1 Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) 5 Ω ID = 1 mA, VGS = Ø f = 1 kHz Input Capacitance Ciss 45 pF VDS = ØV, VGS = – 10V f = 1 MHz Feedback Capacitance Ciss 22 pF VDS = ØV, VGS = – 10V f = 1 MHz Turn On Delay Time td(on) 7 ns Rise Time tr 1 ns Turn Off Delay Time td(off) 12 ns Fall Time tf 2 ns 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 VDD = 1.5V, ID(ON) = 30 mA RL = 50 Ω, VGS(ON) = ØV VGS(OFF) = – 7V www.interfet.com Databook.fxp 1/13/99 2:09 PM Page F-41 F-41 01/99 NJ903 Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS Typical Gate Leakage Current as a Function of Ambient Temperature VGS(OFF) = Ð4.2 V 500 – 100 Leakage Current in nA Drain Current in mA VGS = Ø V 400 VGS = – 1 V 300 VGS = – 2 V 200 VGS = – 3 V 100 IGSS @ VGS = – 20 V VDS = Ø V – 10 –1 – 0.1 VGS = – 4 V – 0.01 5 10 15 0 20 50 75 100 125 Temperature in °C Drain Saturation Current as a Function of VGS(OFF) RDS(ON) as a Function of VGS(OFF) 1000 800 600 400 200 0 –2 –4 –6 8 6 4 2 0 –2 –4 –6 Gate Source Cutoff Voltage in Volts Gate Source Cutoff Voltage in Volts Input Capacitance as a Function of VGS Feedback Capacitance as a Function of VGS –8 Feedback Capacitance in pF 40 VDS = Ø V 60 VDS = 5 V VDS = 15 V 40 20 0 –5 150 10 –8 80 Input Capacitance in pF 25 Drain to Source Voltage in Volts Drain Source (on) Resistance in Ω Drain Saturation Current in mA 0 – 10 – 15 Gate Source Voltage in Volts – 20 30 VDS = Ø V VDS = 5 V VDS = 15 V 20 10 –5 – 10 – 15 Gate Source Voltage in Volts – 20