INTERFET NJ30L

Databook.fxp 1/13/99 2:09 PM Page F-16
F-16
01/99
NJ30L Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
G
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
S-D
S-D
Devices in this Databook based on the NJ30L Process.
Datasheet
2N5911, 2N5912
IFN5911, IFN5912
SMP5911
SMP5912
G
Die Size = 0.016" X 0.016"
All Round Bond Pads = 0.0028"
All Square Bond Pads = 0.004"
Substrate is also Gate.
At 25°C free air temperature:
NJ30L Process
Static Electrical Characteristics
Gate Source Breakdown Voltage
V(BR)GSS
Reverse Gate Leakage Current
IGSS
Drain Saturation Current (Pulsed)
IDSS
Gate Source Cutoff Voltage
VGS(OFF)
Min
Typ
– 25
– 30
Max
Unit
Test Conditions
V
IG = – 1 µA, VDS = ØV
– 100
pA
VGS = – 15V, VDS = ØV
2
40
mA
VDS = 15V, VGS = ØV
– 0.5
–6
V
VDS = 15V, ID = 1 nA
– 10
Dynamic Electrical Characteristics
Forward Transconductance
gfs
8
mS
VDS = 15V, VGS = ØV
f = 1 kHz
Input Capacitance
Ciss
5
pF
VDS = 15V, VGS = ØV
f = 1 MHz
Feedback Capacitance
Crss
1.5
pF
VDS = 15V, VGS = ØV
f = 1 MHz
Equivalent Noise Voltage
e¯ N
2.5
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
nV/√HZ VDS = 10V, ID = 5 mA
f = 1 kHz
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page F-17
F-17
01/99
NJ30L Process
Silicon Junction Field-Effect Transistor
Drain Current as a Function of VDS
Gfs as a Function of VGS(OFF)
VGS(OFF) = Ð2.5 V
15
10
Transconductance in mS
Drain Current in mA
VGS = Ø V
12
VGS = – 0.5 V
9
VGS = –1.0 V
6
VGS = –1.5 V
3
VGS = –2.0 V
5
10
15
7
6
5
0
–1
–2
–3
–4
–5
Drain to Source Voltage in Volts
Gate Source Cutoff Voltage in Volts
Drain Saturation Current as a Function of VGS(OFF)
Forward Tranconductance vs. Drain Current
35
30
25
20
15
10
5
0
–1
–2
–3
–4
–5
–6
–6
10
IDSS = 10 mA
8
IDSS = 16 mA
6
IDSS = 24 mA
4
2
0.1
1
10
Drain Source Cutoff Voltage in Volts
Drain Current in mA
Input Capacitance as a Function of VGS
Feedback Capacitance as a Function of VGS
20
2.5
Feedback Capacitance in pF
7
Input Capacitance in pF
8
20
Forward Transconductance in mS
Drain Saturation Current in mA
0
9
6
VDS = 5 V
5
VDS = 15 V
4
3
0
4
8
12
Gate Source Voltage in Volts
16
VDS = 5 V
2.0
VDS = 15 V
1.5
1.0
0.5
0
–4
–8
– 12
Gate Source Voltage in Volts
– 16