VHM40-06P1 ID25 = 38 A VDSS = 600 V Ω RDSon = 70 mΩ CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base 1) L4 L6 K 12 Preliminary data sheet L9 P 18 R 18 NTC F10 K 13 K10 Pin arangement see outlines T 18 V 18 X 18 Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C ID25 ID90 TC = 25°C TC = 90°C dv/dt VDS < VDSS; IF ≤ 50A;diF/dt≤ 200A/µs TVJ = 150°C EAS EAR ID = 10 A; L = 36 mH; TC = 25°C ID = 20 A; L = 5 µH; TC = 25°C Conditions 600 V ±20 V 38 25 A A 6 V/ns 1.8 1 J mJ Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. RDSon VGS = 10 V; ID = ID90 VGSth VDS = 20 V; ID = 3 mA; IDSS VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C IGSS ECO-PAC 2 with DCB Base - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation - High temperature cycling capability of chip on DCB - solderable pins for DCB mounting ● fast CoolMOS power MOSFET - 2nd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness ● Enhanced total power density Maximum Ratings VGS Symbol ● 70 mΩ 3.5 5.5 60 VGS = ±20 V; VDS = 0 V V 220 55 125 nC nC nC td(on) tr td(off) tf VGS= 10 V; VDS = 380 V; ID = 25 A; RG = 1.8 Ω 30 95 100 10 ns ns ns ns RthJC per MOSFET ● ● ● ● Switched mode power supplies (SMPS) Uninterruptible power supplies (UPS) Power factor correction (PFC) Welding Inductive heating 100 nA VGS= 10 V; VDS = 350 V; ID = 50 A (reverse conduction) IF = 20 A; VGS = 0 V ● 25 µA µA Qg Qgs Qgd VF Applications 0.9 1.1 V 0.45 K/W Data according to IEC 60747 refer to a single diode or transistor unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved CoolMOS is a trademark of Infineon Technologies AG. 238 1) 1-2 VHM40-06P1 Reverse diodes (FRED) Dimensions in mm (1 mm = 0.0394") Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C 18.5 12.0 Symbol Conditions Characteristic Values min. typ. max. VF IF = 15 A; IRM t rr IF = 10 A; diF/dt = 400 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V RthJC RthJH with heatsink compound (0.42 K/m.K; 50 µm) TVJ = 25°C TVJ = 125°C 2.58 1.8 A A 2.64 V V 7 70 A ns 7 3.5 K/W K/W Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25°C 4.75 5.0 3375 5.25 kΩ K Module Conditions Maximum Ratings TVJ Tstg -40...+150 -40...+125 °C °C 3600 V~ 1.5 - 2.0 14 - 18 50 Nm lb.in. m/s2 VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 s Md mounting torque (M4) a Max. allowable acceleration Symbol Conditions Characteristic Values min. typ. max. dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved mm mm 24 g 238 Symbol 2-2