SEMICONDUCTOR
KHB3D0N90P1/F1/F2
TECHNICAL DATA
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
KHB3D0N90P1
A
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switch mode power supplies.
O
C
F
E
DIM
A
G
B
B
Q
C
I
D
E
K
P
M
F
G
L
FEATURES
H
J
I
D
VDSS= 900V, ID= 3A
J
N
H
N
Drain-Source ON Resistance
MILLIMETERS
_ 0.2
9.9 +
15.95 MAX
1.3+0.1/-0.05
_ 0.1
0.8 +
_ 0.2
3.6 +
_ 0.1
2.8 +
3.7
0.5+0.1/-0.05
1.5
_ 0.3
13.08 +
1.46
K
_ 0.1
1.4 +
_ 0.1
1.27 +
_ 0.2
2.54 +
_ 0.2
4.5 +
_ 0.2
2.4 +
_ 0.2
9.2 +
L
M
: RDS(ON)=4.5
@VGS = 10V
N
O
Qg(typ.) = 25nC
1
MAXIMUM RATING (Tc=25
2
3
P
1. GATE
2. DRAIN
3. SOURCE
)
Q
TO-220AB
RATING
KHB3D0N90F1
KHB3D0N90F1 UNIT
KHB3D0N90P1
KHB3D0N90F2
C
A
O
SYMBOL
F
CHARACTERISTIC
V
E
DIM
MILLIMETERS
A
B
C
D
E
F
G
H
J
K
L
M
N
O
Q
R
_ 0.2
10.16 +
_ 0.2
15.87 +
_ 0.2
2.54 +
_ 0.1
0.8 +
_ 0.1
3.18 +
_ 0.1
3.3 +
_ 0.2
12.57 +
_ 0.1
0.5 +
13.0 MAX
_ 0.1
3.23 +
1.47 MAX
1.47 MAX
_ 0.2
2.54 +
_ 0.2
6.68 +
G
900
B
VDSS
Drain-Source Voltage
@TC=25
ID
3.0
3.0*
Pulsed (Note1)
IDP
12
12*
A
Tc=25
Drain Power
Dissipation
L
M
R
J
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
EAS
450
mJ
D
EAR
13
mJ
dv/dt
4.0
V/ns
130
43
1.04
0.34
N
Q
Drain Current
V
30
K
VGSS
Gate-Source Voltage
1
N
2
H
3
1. GATE
2. DRAIN
3. SOURCE
W
PD
Derate above25
_ 0.2
4.7 +
_ 0.2
2.76 +
W/
TO-220IS (1)
Maximum Junction Temperature
Storage Temperature Range
Tj
150
Tstg
-55 150
KHB3D0N90F2
Thermal Characteristics
A
RthJC
0.96
2.9
/W
F
P
Thermal Resistance, Junction-to-Case
C
S
B
E
RthJA
62.5
62.5
/W
G
Thermal Resistance, Junction-toAmbient
K
* : Drain current limited by maximum junction temperature.
L
L
PIN CONNECTION
R
J
M
D
D
D
N
3
MILLIMETERS
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
_ 0.3
10.0 +
_ 0.3
15.0 +
_ 0.3
2.70 +
0.76+0.09/-0.05
_ 0.2
Φ3.2 +
_ 0.3
3.0 +
_
12.0 + 0.3
0.5+0.1/-0.05
_ 0.5
13.6 +
_ 0.2
3.7 +
1.2+0.25/-0.1
1.5+0.25/-0.1
_ 0.1
2.54 +
_ 0.1
6.8 +
_ 0.2
4.5 +
_ 0.2
2.6 +
0.5 Typ
1. GATE
2. DRAIN
3. SOURCE
TO-220IS
S
2007. 9. 10
2
H
Q
1
G
N
DIM
Revision No : 0
1/7
KHB3D0N90P1/F1/F2
ELECTRICAL CHARACTERISTICS (Tc=25
CHARACTERISTIC
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
900
-
-
V
-
1
-
Static
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
BVDSS/ Tj
ID=250 A, VGS=0V
ID=250 A, Referenced to 25
V/
Gate Threshold Voltage
Vth
VDS=VGS, ID=250 A
2.0
-
4.0
V
Drain Cut-off Current
IDSS
VDS=900V, VGS=0V,
-
-
10
A
Gate Leakage Current
IGSS
VGS= 30V, VDS=0V
-
-
100
VGS=10V, ID=1.5A
-
4.0
4.5
-
25
32
-
4
-
RDS(ON)
Drain-Source ON Resistance
nA
Dynamic
Qg
Total Gate Charge
VDS=720V, ID=3.0A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
11.5
-
Turn-on Delay time
td(on)
-
31
72
-
65
139
-
104
218
tr
Turn-on Rise time
(Note4, 5)
VDD=450V, RG=25
td(off)
Turn-off Delay time
VGS=10V
ID=3.0A
(Note4, 5)
nC
ns
Turn-off Fall time
tf
-
127
264
Input Capacitance
Ciss
-
820
1066
Output Capacitance
Coss
-
63
82
Reverse Transfer Capacitance
Crss
-
9
12
-
-
3.0
-
-
12
IS=3.0A, VGS=0V
-
-
1.6
V
-
510
-
ns
-
2.2
-
C
VDS=25V, VGS=0V, f=1.0MHz
pF
Source-Drain Diode Ratings
IS
Continuous Source Current
VGS<Vth
Pulsed Source Current
ISP
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
IS=3.0A, VDD=450V,
Reverse Recovery Charge
Qrr
dIs/dt=100A/ s
A
(Note 4)
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =94mH, IS=3.0A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS
3.0A, dI/dt
200A/
Note 4) Pulse Test : Pulse width
, VDD
300
BVDSS, Starting Tj=25
, Duty Cycle
.
2%.
Note 5) Essentially independent of operating temperature.
2007. 9. 10
Revision No : 0
2/7
KHB3D0N90P1/F1/F2
ID - VDS
1
VGS
TOP : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom: 5.5V
0
10
-1
10
-2
10
VDS = 50V
250µs Pulse Test
1
10
Drain Current ID (A)
Drain Current ID (A)
10
ID - VGS
150 C
0
10
25 C
-55 C
-1
-1
10
10
0
10
1
10
2
4
Drain - Source Voltage VDS (V)
6
10
Gate - Source Voltage VGS (V)
RDS(ON) - ID
BVDSS - Tj
4.2
1.2
On - Resistance RDS(ON) (Ω)
Normalized Breakdown Voltage BVDSS
8
VGS = 0V
IDS = 250
1.1
1.0
0.9
0.8
-100
4.0
3.8
VGS = 10V
3.6
3.4
3.2
0
-50
0
50
100
1
2
3
150
Drain Current ID (A)
Junction Temperature Tj ( C )
IS - VSD
10
VGS = 50V
250µs Pulse Test
2.5
Normalized On Resistance
Reverse Drain Current IS (A)
RDS(ON) - Tj
1
0
10
150 C
25 C
VGS =10V
ID = 1.5A
2.0
1.5
1.0
0.5
-1
10
0.2
0.4
0.6
0.8
1.0
1.2
0.0
-100
-50
0
50
100
150
Source - Drain Voltage VSD (V)
Junction Temperture Tj ( C)
2007. 9. 10
Revision No : 0
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KHB3D0N90P1/F1/F2
Qg- VGS
C - VDS
3000
Ciss
Capacitance (pF)
2500
2000
1500
Coss
1000
Crss
500
0
Gate - Source Voltage VGS (V)
12
VGS = 0V
Frequency = 1MHz
ID = 9.0A
VDS = 180V
10
VDS = 450V
8
VDS = 720V
6
4
2
0
10-1
100
101
0
5
10
15
20
Drain - Source Voltage VDS (V)
Gate - Charge Qg (nC)
Safe Operation Area
Safe Operation Area
(KHB3D0N90P1)
(KHB3D0N90F1)
Operation in this area
is limited by RDS(ON)
Operation in this area
is limited by RDS(ON)
101
Drain Current ID (A)
Drain Current ID (A)
102
100µs
1ms
10ms
DC
100
10-1
Tc= 25 C
Tj = 150 C
Single nonrepetitive pulse
-2
10
100
30
25
100µs
101
1ms
10ms
100
100ms
DC
10-1
Tc= 25 C
Tj = 150 C
Single nonrepetitive pulse
102
101
10-2 0
10
103
Drain - Source Voltage VDS (V)
101
102
103
Drain - Source Voltage VDS (V)
ID - Tj
Drain Current ID (A)
4
3
2
1
0
25
50
75
100
125
150
Junction Temperature Tj ( C )
2007. 9. 10
Revision No : 0
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KHB3D0N90P1/F1/F2
Rth
Transient Thermal Resistance [ C / W]
{KHB3D0N90P1}
100
Duty=0.5
0.2
10-1
PDM
0.1
t1
0.05
t2
0.02
1
0.0
lse
le
- Duty Factor, D= t1/t2
Pu
g
Sin
- RthJC =
10-2
10-5
10-4
10-3
10-2
10-1
Tj(max) - Tc
PD
100
101
Square Wave Pulse Duration (sec)
Rth
Transient Thermal Resistance [ C / W]
{KHB3D0N90F1}
100
Duty=0.5
0.2
0.1
0.05
PDM
10-1
t1
0.02
t2
0.01
lse
gle
- Duty Factor, D= t1/t2
Tj(max) - Tc
- RthJC =
PD
Pu
Sin
10-2
10-5
10-4
10-3
10-2
10-1
100
101
Square Wave Pulse Duration (sec)
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Revision No : 0
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KHB3D0N90P1/F1/F2
- Gate Charge
VGS
10 V
Fast
Recovery
Diode
ID
ID
0.8 VDSS
1.0 mA
VDS
Q
Qgs
Qgd
VGS
Qg
- Single Pulsed Avalanche Energy
EAS=
1
LIAS2
2
BVDSS
BVDSS - VDD
BVDSS
IAS
L
0.5 VDSS
ID(t)
25Ω
VDS
VDD
10 V
VDS(t)
VGS
Time
tp
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Revision No : 0
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KHB3D0N90P1/F1/F2
- Resistive Load Switching
VDS
90%
RL
0.5 VDSS
25 Ω
VDS
VGS 10%
tf
10V
td(on)
VGS
tr
td(off)
toff
ton
- Source - Drain Diode Reverse Recovery and dv /dt
Body Diode Forword Current
DUT
VDS
ISD
(DUT)
di/dt
IF
IRM
Body Diode Reverse Current
IS
0.8 x VDSS
driver
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
10V
VDD
VGS
Body Diode Forword Voltage drop
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Revision No : 0
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