Point Light Source LED Chip OPA6530S1 GaAsP/GaAs 1. Material Substrate GaAs (N Type) Epitaxial Layer GaAsP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Aluminum Alloy 3. Electro-Optical Characteristics Parameter Symbol Min Forward Voltage VF Reverse Voltage VR Brightness Wavelength Iv λd Typ Max Unit 1.75 1.9 V IF=10mA 5 V IR=10uA 25 mcd IF=20mA nm IF=10mA 650 Condition ∆λ 35 nm IF=10mA ※ Note : Brightness is measured by Sorter E/T system with bare chip. 4. Mechanical Data (a) Emission Area (b) Bottom Area (c) Bonding Pad (d) Chip Thickness ----------------------- 5.1mil x 5.1mil ----------------------- ####### ##### ----------------------- 115um 11mil ----------------------- P side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr N side Electrode