KODENSHI OPA6917

Red LED Chip
OPA6917
GaP/GaP
1. Material
Substrate
GaP
Epitaxial Layer GaP
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
3. Electro-Optical
Characteristics
Parameter
(N Type)
(P/N Type)
Symbol Min
Forward Voltage
Typ
Unit
Condition
V
IF=1mA
V
IF=20mA
V
IR=10uA
35
mcd
IF=20mA
635
nm
IF=20mA
VF(1)
1.8
VF(2)
2.25
Reverse Voltage
VR
8
Brightness
Iv
λd
30
Wavelength
Max
2.4
∆λ
100
nm
IF=20mA
※ Note : Brightness is measured by Sorter E/T system with bare chip.
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
(e) Junction Height
--------------------- 10mil x 10mil
--------------------- 11mil x 11mil
--------------------- 115um
--------------------- 11mil
--------------------- 6.8mil
(b)
(d)
(e)
P Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. +82 63 839 1111 Fax. +82 63 835 8259
www.auk.co.kr
N Epi
(a)
P Epi
(c)
Substrate
4. Mechanical Data (a) Emission Area
N Side Electrode