Infrared LED Chip OPA7716WDD AlGaAs / GaAs 1. Material Substrate GaAs (N Type) Epitaxial Layer AlGaAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF Typ Max Unit Condition 2.0 V IF=50mA Reverse Current VR 8 V IR=10uA Power PO 9 mW IF=50mA nm IF=50mA λP Wavelength 770 ∆λ 30 nm IF=50mA ※ Note : Power is measured by Sorter E/T system with bare chip. 4. Mechanical Data (a) Emission Area (b) Bottom Area (c) Bonding Pad (d) Chip Thickness -------------------- 15.0mil x 15.0mil -------------------- 16.0mil x 16.0mil -------------------- 130um -------------------- 7.8mil (b) (d) P Side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr N Epi (a) P Epi (c) N Side Electrode