SECOS STT3998N

STT3998N
Dual N-Ch Enhancement Mode Mos.FET
3.7 A, 20 V, RDS(ON) 58 m
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
TSOP-6
DESCRIPTION
A
E
These miniature surface mount MOSFETs utilize a high cell density
trench process to provide low RDS(on) and to ensure minimal power
loss and heat dissipation. Typical applications are DC-DC converters
and power management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and cordless
telephones.



F
20
2
3
C
H
J
K
REF.
A
B
C
D
E
F
PRODUCT SUMMARY
PRODUCT SUMMARY
RDS(on) (m
[email protected]= 4.5V
[email protected]= 2.5V
1
DG
Low RDS(on) provide higher efficiency and extends battery
life.
Low thermal impedance copper leadframe TSOP-6 saves
board space.
Fast switching speed.
High performance trench technology.
VDS(V)
L
4
B
FEATURES

5
6
Millimeter
Min.
Max.
2.70
3.10
2.60
3.00
1.40
1.80
1.10 MAX.
1.90 REF.
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0
0.10
0.60 REF.
0.12 REF.
0°
10°
0.95 REF.
ID(A)
3.7
3.1
G
D
S
S
G
D
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA= 25°C
TA= 70°C
a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
ID
IDM
IS
TA= 25°C
TA= 70°C
Power Dissipation a
Operating Junction and Storage Temperature Range
PD
Tj, Tstg
Ratings
Maximum
20
±12
3.7
2.9
8
1.05
1.15
0.7
-55 ~ 150
Unit
V
V
A
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient a
t ≦ 10 sec
Steady State
Symbol
Typ.
Max.
Unit
RJA
93
130
110
150
°C / W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
27-Aug-2010 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
STT3998N
Dual N-Ch Enhancement Mode Mos.FET
3.7 A, 20 V, RDS(ON) 58 m
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
Symbol Min.
Typ. Max.
Unit
Test Conditions
VGS(th)
0.7
-
-
V
VDS=VGS, ID= 250uA
Gate-Body Leakage
IGSS
-
-
1
uA
VDS= 0V, VGS= 12V
-
-
0.1
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current a
Drain-Source On-Resistance a
ID(on)
RDS(ON)
uA
-
-
1
30
-
-
-
-
58
VDS= 16V, VGS= 0V, TJ= 55°C
A
VDS = 5V, VGS= 4.5V
mΩ
-
-
82
VDS= 16V, VGS= 0V
VGS= 4.5V, ID= 3.7A
VGS= 2.5V, ID= 2.7A
Forward Transconductance a
gfs
-
10
-
S
VDS= 10V, ID= 6.8A
Diode Forward Voltage a
VSD
-
0.8
-
V
IS= 1.05A, VGS= 0V
DYNAMIC b
Total Gate Charge
Qg
-
7.5
-
Gate-Source Charge
Qgs
-
0.6
-
Gate-Drain Charge
Qgd
-
1.0
-
Turn-on Delay Time
Td(on)
-
5
-
Tr
-
12
-
Td(off)
-
13
-
Tf
-
7
-
Rise Time
Turn-off Delay Time
Fall Time
nC
VDS= 10V, VGS= 4.5V,
ID= 3.7A
nS
VDD= 10V, VGS= 4.5V,
RGEN= 15, ID= 1A
Notes
a.
Pulse test:PW ≦ 300 us duty cycle ≦ 2%.
b.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
27-Aug-2010 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2