SYNC-POWER SPC6604_14

SPC6604
N & P Pair Enhancement Mode MOSFET
DESCRIPTION
The SPC6604 is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
 Power Management in Note book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
 DSC
 LCD Display inverter
FEATURES

N-Channel
20V/4.0A,RDS(ON)=50mΩ@VGS=4.5V
20V/3.4A,RDS(ON)=60mΩ@VGS=2.5V
20V/2.8A,RDS(ON)=75mΩ@VGS=1.8V

P-Channel
-20V/-3.4A,RDS(ON)= 85mΩ@VGS=-4.5V
-20V/-2.4A,RDS(ON)=110mΩ@VGS=-2.5V
-20V/-1.7A,RDS(ON)=130mΩ@VGS=-1.8V

Super high density cell design for extremely low
RDS (ON)

Exceptional on-resistance and maximum DC
current capability

TSOT–23- 6P package design
PIN CONFIGURATION( TSOT-23– 6P )
PART MARKING
2013/12/25 Ver.1
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SPC6604
N & P Pair Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
Symbol
Description
1
G1
Gate 1
2
S2
Source 2
3
G2
4
D2
Gate 2
Drain 2
5
S1
6
D1
Source 1
Drain1
ORDERING INFORMATION
Part Number
Package
Part
SPC6604TS26RGB
TSOT-23- 6P
Marking
04YW
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※ SPC6604TS26RGB : Tape Reel ; Pb – Free ; Halogen -Free
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Typical
Parameter
Symbol
Unit
N-Channel
P-Channel
Drain-Source Voltage
VDSS
20
-20
V
Gate –Source Voltage
VGSS
±12
±12
V
4.0
3.4
-3.4
-2.8
-2.4
-2.1
IDM
10
IS
1.6
-8
-1.4
Continuous Drain Current(TJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
2013/12/25 Ver.1
1.15
PD
T ≤ 10sec
Steady State
RθJA
℃
℃
-55/150
-55/150
50
90
A
A
W
0.75
TJ
TSTG
A
52
90
℃/W
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SPC6604
N & P Pair Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max. Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
V(BR)DSS
VGS(th)
Gate Leakage Current
IGSS
Zero Gate Voltage Drain
Current
IDSS
On-State Drain Current
ID(on)
Drain-Source On-Resistance RDS(on)
Forward Transconductance
gfs
Diode Forward Voltage
VSD
VGS=0V,ID= 250uA
VGS=0V,ID=-250uA
VDS=VGS,ID=250uA
VDS=VGS,ID=-250uA
VDS=0V,VGS=±12V
VDS=0V,VGS=±12V
VDS= 16V,VGS=0V
VDS=-16V,VGS=0V
VDS= 16V,VGS=0V TJ=55℃
VDS=-16V,VGS=0V TJ=55℃
VDS≥ 4.5V,VGS = 10V
VDS≤ -4.5V,VGS =-10V
VGS=4.5V,ID=4.0A
VGS=-4.5V,ID=-3.4A
VGS=2.5V,ID=3.4A
VGS=-2.5V,ID=-2.4A
VGS=1.8V,ID=2.8A
VGS=-1.8V,ID=-1.7A
VDS=5V,ID=-3.6A
VDS=-5V,ID=-2.8A
IS=1.6A,VGS=0V
IS=-1.5A,VGS=0V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
-20
0.4
-0.35
1.0
-0.8
±100
±100
1
-1
10
-10
6
-6
V
nA
uA
A
0.040
0.068
0.046
0.090
0.056
0.113
10
6
0.8
-0.8
0.050
0.085
0.060
0.110
0.075
0.130
4.8
4.8
1.0
1.0
1.0
1.0
8
10
12
13
30
18
12
15
8
8
Ω
S
1.2
-1.2
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
td(on)
Turn-On Time
tr
td(off)
Turn-Off Time
tf
2013/12/25 Ver.1
N-Channel
VDS=6V,VGS=4.5V, ID≡2.8A
P-Channel
VDS=-6V,VGS=-4.5V ,ID≡-2.8A
N-Channel
VDD=6V,RL=6Ω ,ID≡1.0A
VGEN=4.5V ,RG=6Ω
P-Channel
VDD=-6V,RL=6Ω ,ID≡-1.0A
VGEN=-4.5V ,RG=6Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
nC
14
16
18
23
35
25
16
20
nS
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SPC6604
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( N-Channel )
2013/12/25 Ver.1
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SPC6604
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( N-Channel )
2013/12/25 Ver.1
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SPC6604
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( N-Channel )
2013/12/25 Ver.1
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SPC6604
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( P-Channel )
2013/12/25 Ver.1
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SPC6604
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( P-Channel )
2013/12/25 Ver.1
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SPC6604
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( P-Channel )
2013/12/25 Ver.1
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SPC6604
N & P Pair Enhancement Mode MOSFET
TSOP- 6P PACKAGE OUTLINE
2013/12/25 Ver.1
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SPC6604
N & P Pair Enhancement Mode MOSFET
2013/12/25 Ver.1
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SPC6604
N & P Pair Enhancement Mode MOSFET
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Phone: 886-2-2655-8178
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2013/12/25 Ver.1
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