TYSEMI 2SB799

Product specification
2SB799
Features
World standard miniature package:SOT-89
Low collector saturation voltage:VCE(sat)<-0.4V(IC=-500mA,IB=-50mA)
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
-60
V
Collector to emitter voltage
VCEO
-50
V
Emitter to base voltage
VEBO
-5
V
Collector current
IC
-0.7
A
Collector current(Pulse) *
IC
-1.0
A
Total power dissipation
PT
2
W
Junction temperature
Tj
150
Tstg
-55 to +150
Storage temperature range
* PW
10ms,duty cycle 50%.
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = -60 V, IE = 0
Testconditons
Min
Typ
-100
nA
Emitter cutoff current
IEBO
VEB = -5.0 V, IC = 0
-100
nA
DC current gain *
hFE
VCE = -1.0 V, IC = -100 mA
90
200
VCE = -1.0 V, IC = -500 mA
50
120
400
Collector saturation voltage *
VCE(sat) IC = -500mA, IB = -50mA
-0.16
-0.4
V
Base saturation voltage *
VBE(sat) IC = -500mA, IB = -50mA
-0.9
-1.2
V
-630
-700
mV
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW
VBE
VCE = -6.0 V, IC = -10 mA
fT
VCE = -6.0 V, IE = 10 mA
120
MHz
VCB = -6.0 V, IE = 0 , f = 1.0 MHz
25
pF
Cob
350 ìs, duty cycle
-600
2%
hFE Classification
Marking
MM
ML
MK
hFE
90 180
135 270
200 400
http://www.twtysemi.com
[email protected]
4008-318-123
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