Transistors IC SMD Type Product specification 2SD1033 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.8 0.50-0.7 Features 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 High Voltage VCEO=150V 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCEO 150 V Emitter to base voltage VEBO 5 V ICP 3 A Peak collector current *1 Collector current IC 2 A PT 2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Collector power dissipation Ta = 25 * PW *2 10ms,Duty Cycle 50% *2 when mounted on ceramic substrate of 7.5cm2X0.7mm Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = 150V, IE = 0 50 ìA Emitter cutoff current IEBO VEB = 4V, IC = 0 50 ìA hFE VCE=10V,IC=0.4A DC Current Gain * Collector saturation voltage * VCE(sat) Gain saturation Voltage * PW fT Testconditons Min 40 Typ 100 200 IC = 500mA, IB = 0.4A 0.2 1.0 VCE=10V,IE=0.4A 10 V MHZ 350ìs,Duty cycle 2% hFE Classification Marking M L K hFE 40 to 80 60 to 120 100 to 200 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1