Transistors SMD Type Product specification 2SD1615A Features World Standard Miniature Package. Low VCE(sat) VCE(sat) = 0.15 V Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 120 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V Collector current (DC) IC 1 A Collector Current (pulse) *1 IC 2 A W PT 2.0 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Total power dissipation at 25 *1 Pulse Test PW Ambient Temperature*2 10ms, Duty Cycle 50%. *2 When mounted on ceramic substrate of 16 cm2X 0.7 mm Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 120 V, IE = 0 A 100 nA Emitter cutoff current IEBO VEB = 6.0 V, IC = 0 A 100 nA DC current gain * hFE VCE = 2.0 V, IC = 100 mA 135 400 Collector saturation voltage * VCE(sat) IC = 1 A, IB = 50 mA 0.15 0.3 V Base saturation voltage * VBE(sat) IC = 1 A, IB = 50 mA 0.9 1.2 V 700 mV Base-emitter voltage * VBE Gain bandwidth product fT Output capacitance * Pulsed: PW Cob 350 ìs, duty cycle VCE = 2.0 V, IC = 50 mA 600 VCE = 2.0 V, IE = -100 mA 80 VCB = 10 V, IE = 0, f = 1.0 MHz 160 MHz 19 pF 2% hFE Classification Marking GQ GP hFE 135 270 200 400 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1