Transistors SMD Type NPN Transistors 2SD2195 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=2A ● Collector Emitter Voltage VCEO=100V C ● Complementary to 2SB1580 0.42 0.1 B R1 0.46 0.1 1.Base R2 E R1 3.5kΩ 2.Collector 3.Emitter R2 300Ω ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 100 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 2 Collector Current - Pulse ICP 3 Collector Power Dissipation PC (Note.1) 2 TJ 150 Tstg -55 to 150 Junction Temperature Storage Temperature Range 0.5 Unit V A W ℃ Note.1 :Mounted on a 40×40× 0.7mm ceramic substrate ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 100 Collector- emitter breakdown voltage VCEO Ic= 5 mA，IB= 0 100 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 Collector-base cut-off current ICBO VCB= 100 V , IE= 0 10 uA Emitter cut-off current IEBO VEB= 5V , IC=0 3 mA Collector-emitter saturation voltage VCE(sat) IC=1 A, IB=1mA 1.5 Base - emitter saturation voltage VBE(sat) IC=1 A, IB=1mA 2 DC current gain hFE VCE= 2V, IC=1 A Collector output capacitance Cob VCB= 10V,IE=0, f=1MHz 25 pF VCB= 5V, IE=-100mA ,f=30MHz 80 MHz Transition frequency fT V 6 1000 V 10000 ■ Marking Marking DP www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SD2195 ■ Typical Characterisitics 10 A 0.9m A 0.8m A 0.7m A 0.6m 1.2 A 0.4m 0.8 A IB=0.3m 0.4 0 0 1 2 3 5 4 2 1 0.5 0.2 0.1 0.05 0.01 0.2 25 °C 25 °C 00 °C =1 Ta DC CURRENT GAIN : hFE 2000 200 100 50 20 10 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 Ta=25° C 20 10 5 IC/IB=1000 2 500 1 0.5 0.2 0.1 0.0.1 0.0.2 0.0.5 0.1 0.2 50 20 10 5 2 0.5 1 2 5 10 10 5 Ta=25° C Single Nonrepetitive Pulse IC Max Pulse 2 Pw 1 =1 500m 200m 00 m s DC 100m 50m 20m 10m 5m When mounted on a 14 8 0.8mm 0.5 1 2 5 10 20 50 100 Fig.7 Collector output capacitance vs. collector-base voltage www.kexin.com.cn 100 50 20 10 0.001 0.01 0.1 1 10 100 IC/IB=1000 50 20 10 5 2 1 Ta= 25° C 25° C 100° C 0.5 0.2 0.1 0.0.1 0.0.2 0.0.5 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage vs.collector current vs.collector current COLLECTOR CURRENT : IC (A) 100 0.2 200 COLLECTOR CURRENT : IC (A) 1ms Pw= s 0m =1 Pw 200 1 0.1 500 3.0 2m glass epoxy board. 1m 0.1 0.2 0.5 1 2 + + COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 2.6 50 Ta=25° C f=1MHz IE=0A COLLECTOR TO BASE VOLTAGE : VCB (V) 2 2.2 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current 500 1.8 100 COLLECTOR CURRENT : IC (A) 1000 1.4 2V 1000 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=2V 5000 500 1.0 VCE=4V Fig.2 Grounded emitter propagation Fig.3 DC current gain vs. collector current characteristics Fig.1 Grounded emitter output characteristics 1000 0.6 Ta=25° C 2000 0.02 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 10000 DC CURRENT GAIN : hFE A 0.5m 5000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1.6 10000 VCE=2V 5 25° C 25° C A 1m Ta= 100 ° C Ta=25° C COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 2.0 5 10 20 50 100 200 500 1000 COLLECTOR TO EMITTER VOLTTER VOLTAGE :VCE (V) Fig.8 Safe operating area