Transistors IC SMD Type Product specification KI2306 DS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 100% Rg Tested 0.4 3 TrenchFET Power MOSFET 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 G S +0.1 0.38-0.1 +0.1 0.97-0.1 D 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-source voltage VDS 30 Gate-source voltage VGS Continuous drain current (TJ = 150 ) *1,2 TA=25 -TA=70 ID Pulsed drain current 20 3.5 2.8 Unit V V A IDM 16 A Continuous source current (diode conduction) *1,2 IS 1.25 A Maximum Power dissipation *1,2 -- PD 1.25 0.8 W Tj,Tstg -55 to +150 TA=25 TA=70 Operating junction and storage temperature range Maximum Junction to Ambienta t 5 sec RthJA Steady State 100 130 /W *1 Surface Mounted on FR4 Board. *2 t 5 sec http://www.twtysemi.com [email protected] 4008-318-123 1 of 4 Transistors IC MOSFET SMD Type Product specification KI2306 DS Electrical Characteristics Ta = 25 Parameter Symbol Drain-source breakdown voltage Testconditons Min V(BR)DSS VGS = 0 V, ID = 250 ìA Gate threshold voltage VGS(th) Gate-body leakage IGSS Zero gate voltage drain current IDSS On-state drain current ID(on) Drain-source on-state resistance rDS(on) Max 30 VDS = VGS, ID = 250 ìA VDS = 0 V, VGS = Typ Unit V 1 20 V 100 VDS = 30V, VGS = 0 V 0.5 VDS =30V, VGS = 0 V, TJ = 55 10 VDS 4.5 V, VGS = 10 V 6 VDS 4.5 V, VGS = 4.5 V 4 nA ìA A VGS = 10 V, ID = 3.5 A 0.046 0.057 VGS =4.5 V, ID =2.8 A 0.070 0.094 Ù Forward transconductance gfs VDS =4.5 V, ID = 3.5 A Diode forward voltage VSD IS = 1.25 A, VGS = 0 V 0.8 1.2 V gate charge * Qg VDS = 15V ,VGS =5V , ID= 3.5 A 4.2 7 nC Total gate charge * Qgt 8.5 20 Gate-source charge * Qgs Gate-drain charge * Qgd Gate Resistance Rg Input capacitance * Ciss Output capacitance * Coss Reverse transfer capacitance * Crss Turn-on time VDS = 15V ,VGS = 10 V , ID= 3.5 A 300 ìs duty cycle nC 1.9 1.35 0.5 2.4 Ù 555 VDS = 15V ,VGS = 0 , f = 1 MHz pF 120 60 9 20 tr 7.5 18 17 35 5.2 12 VDD = 15V , RL = 15Ù , ID = 1A , VGEN =-10V , RG = 6Ù tf * Pulse test: PW S td(on) td(off) Turn-off time 6.9 ns 2%. Marking Marking A6SUB http://www.twtysemi.com [email protected] 4008-318-123 2 of 4 Transistors IC SMD Type Product specification KI2306 DS ■ Typical Characteristics Output Characteristics 16 VGS = 10 thru 5 V 12 I D - Drain Current (A) I D - Drain Current (A) 12 Transfer Characteristics 16 4V 8 4 8 TC = 125_C 4 25_C 3 thru 1 V 0 - 55_C 0 0 2 4 6 8 10 0 1 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 0.5 2 3 4 5 VGS - Gate-to-Source Voltage (V) Capacitance 800 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 700 0.4 0.3 0.2 500 400 300 Coss 200 VGS = 4.5 V 0.1 Ciss 600 VGS = 10 V 100 0.0 Crss 0 0 4 8 12 0 16 6 Gate Charge r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 1.6 VDS = 15V ID = 3.5 A 8 6 4 2 0 0 2 4 6 8 10 Qg - Total Gate Charge (nC) http://www.twtysemi.com 18 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 10 12 [email protected] 1.4 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.5 A 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) 4008-318-123 3 of 4 Transistors IC SMD Type Product specification KI2306 DS Source-Drain Diode Forward Voltage 0.4 r DS(on) - On-Resistance ( W ) I S - Source Current (A) On-Resistance vs. Gate-to-Source Voltage 0.5 10 TJ = 150_C TJ = 25_C 0.3 0.2 ID = 3.5 A 0.1 0.0 1 0.00 0.2 0.4 0.6 1.0 0.8 0 1.2 VSD - Source-to-Drain Voltage (V) 2 4 8 10 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.4 12 ID = 250 mA 0.2 10 8 - 0.0 Power (W) V GS(th) Variance (V) 6 - 0.2 6 - 0.4 4 - 0.6 2 - 0.8 - 50 - 25 0 25 50 75 100 125 TA = 25_C 0 150 0.01 0.1 10 1 TJ - Temperature (_C) 100 500 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 500 Square Wave Pulse Duration (sec) http://www.twtysemi.com [email protected] 4008-318-123 4 of 4