Product specification MMBTA05,MMBTA06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NPN silicon. 0.55 Driver transistors. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol MMBTA05 MMBTA06 Unit Collector-emitter voltage VCEO 60 80 V Collector-base voltage VCBO 60 Emitter-base voltage VEBO 4.0 V Collector current IC 500 mA Total Device Dissipation FR-5 Board (* 1) @TA = 25 Derate above 25 PD 225 1.8 mW mW/ RèJA 556 /W 300 2.4 mW mW/ RèJA 417 /W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (* 2) @TA = 25 Derate above 25 PD Thermal Resistance, Junction-to-Ambient 80 V * 1. FR-5 = 1.0 X 0.75 X 0.062 in. * 2. Alumina = 0.4X 0.3 X 0.024 in. 99.5% alumina. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification MMBTA05,MMBTA06 Electrical Characteristics Ta = 25 Parameter Symbol Collector-emitter breakdown voltage* MMBTA05 V(BR)CEO Testconditons Min IC = 1.0 mA, IB = 0 MMBTA06 Emitter-base breakdown voltage Base cutoff current Collector cutoff current MMBTA05 Max Unit V 80 V V(BR)EBO IE = 100 ìA, IC = 0 ICES VCE = 60 V, IB = 0 0.1 ìA VCB = 60 V, IE = 0 0.1 ìA VCB = 80 V, IE = 0 0.1 ìA ICBO MMBTA06 DC current gain Typ 60 HFE 4 IC = 10 mA, VCE = 1.0 V 100 IC = 100 mA, VCE = 1.0 V 100 V Collector-emitter saturation voltage VCE(sat) IC = 100 mA, IB = 10 mA 0.25 V Base-emitter saturation voltage VBE(on) IC = 100 mA, VCE = 1.0 V 1.2 V Current-gain-bandwidth product fT * Pulse test: pulse width 300 ìs, duty cycle IC = 10 mA, VCE = 2.0 V, f = 100 MHz 100 MHz 2.0%. hFE Classification TYPE MMBTA05 MMBTA06 Marking 1H 1GM http://www.twtysemi.com [email protected] 4008-318-123 2 of 2