KEXIN MMBT5550

Transistors
SMD Type
High Voltage Transistors
MMBT5550
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
NPN Silicon
0.55
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-emitter voltage
VCEO
140
V
Collector-base voltage
VCBO
160
V
Emitter-base voltage
VEBO
6
V
IC
600
mA
PD
225
mW
RèJA
556
/W
PD
300
mW
Collector current -continuous
Total device dissipation FR-5 board *1
@TA = 25
1.8
Derate above 25
Thermal resistance, junction-to-ambient
mW/
Total device dissipation alumina substrate *2
@TA = 25
2.4
derate above 25
Thermal resistance, junction-to-ambient
Junction and storage temperature
RèJA
417
TJ, Tstg
-55 to +150
mW/
/W
* 1. FR-5 = 1.0 X 0.75 X 0.062 in.
* 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
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1
Transistors
SMD Type
MMBT5550
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
Collector?emitter breakdown voltage *
V(BR)CEO IC = 1.0 mA, IB = 0
140
V
Collector?base breakdown voltage
V(BR)CBO IC = 100 ìA, IE = 0
160
V
Emitter ?base breakdown voltage
V(BR)EBO IE = 10 ìA, IC = 0
6
V
ICBO
Collector cutoff current
VCB = 100 V, IE = 0
100
nA
ìA
nA
VCB = 100 V, IE = 0, Ta = 100
100
Emitter cutoff current
IEBO
VEB = 4.0 V, IC = 0
50
IC = 1.0 mA, VCE = 5 V
60
DC current gain
hFE
IC = 10 mA, VCE = 5 V
60
IC = 50 mA, VCE = 5 V
20
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector emitter cut-off
VCE(sat)
VBE(sat)
ICES
* Pulse Test: Pulse Width = 300 ìs, Duty Cycle=2.0%.
Marking
Marking
2
Testconditons
M1F
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250
IC = 10 mA, IB = 1.0 mA
0.15
V
IC = 50 mA, IB = 5.0 mA
0.25
V
IC = 10 mA, IB = 1.0 mA
1.0
V
IC = 50 mA, IB = 5.0 mA
1.2
V
VCB = 10 V
50
nA
VCB = 75 V
100
nA