AO4622 20V Dual P + N-Channel MOSFET General Description Product Summary The AO4622 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-Channel P-Channel VDS (V) = 20V -20V -5A (VGS=-4.5V) ID = 7.3A (VGS=4.5V) RDS(ON) RDS(ON) < 23mΩ (VGS=10V) < 53mΩ (VGS = -4.5V) < 87mΩ (VGS = -2.5V) < 30mΩ (VGS=4.5V) < 84mΩ (VGS=2.5V) 100% UIS Tested 100% Rg Tested 100% UIS Tested 100% Rg Tested SOIC-8 Top View D1 D2 Bottom View Top View S1 G1 S2 G2 D1 D1 D2 D2 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 20 Gate-Source Voltage VGS Pulsed Drain Current TA=70°C B TA=25°C Power Dissipation TA=70°C ±12 7.3 -5 ID 6.2 -4.2 IDM 35 -25 2 2 1.44 1.44 PD p-channel Max p-channel -20 ±16 TA=25°C Continuous Drain Current AF S2 n-channel Pin1 Units V V A W Avalanche Current B IAR 13 13 A Repetitive avalanche energy 0.3mH B EAR 25 25 mJ Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 °C Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch Typ 48 74 35 Max 62.5 110 40 Units °C/W °C/W °C/W p-ch p-ch p-ch 48 74 35 62.5 110 40 °C/W °C/W °C/W www.aosmd.com AO4622 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 20 1 5 Gate-Body leakage current VDS=0V, VGS=±16V Gate Threshold Voltage VDS=VGS ID=250µA 0.6 ID(ON) On state drain current VGS=4.5V, VDS=5V 35 100 nA 2 V 19 23 28 33.6 VGS=4.5V, ID=6.4A 24 30 mΩ VGS=2.5V, ID=2A 67 84 mΩ TJ=125°C A gFS Forward Transconductance VDS=5V, ID=7.3A 17 VSD Diode Forward Voltage IS=1A 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance uA 1.25 VGS=10V, ID=7.3A Coss Units V TJ=55°C IGSS Static Drain-Source On-Resistance Max VDS=16V, VGS=0V VGS(th) RDS(ON) Typ S 900 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz mΩ 1 V 3 A 1100 pF 162 pF 105 pF Ω 0.9 1.35 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 15 18 nC Qg(4.5V) Total Gate Charge 7.2 9 nC VGS=10V, VDS=10V, ID=6.5A Qgs Gate Source Charge 1.8 nC Qgd tD(on) Gate Drain Charge 2.8 nC Turn-On DelayTime 4.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=7.3A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=7.3A, dI/dt=100A/µs 9.5 Body Diode Reverse Recovery Time VGS=10V, VDS=10V, RL=1.4Ω, RGEN=3Ω 9.2 ns 18.7 ns 3.3 ns 18 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. RθJL and RθJC are equivalent terms referring to thermal resistance from junction to drain lead. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev5: Nov 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4622 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 30 6V 10V 4.5V 50 125°C -40°C 20 3.5V 30 ID(A) ID (A) 40 25°C VDS=5V 25 20 15 1.4 10 494 692 VGS=3V 10 5 593 830 0 0 1 2 3 4 0 5 1 VDS (Volts) Figure 1: On-Region Characteristics 5 193 18 VGS=10V, 7.3A Normalized On-Resistance 90 1.40 80 RDS(ON) (mΩ ) 3 4 VGS(Volts) Figure 2: Transfer Characteristics 1.60 100 70 VGS=2.5V 60 VGS=4.5V, 6.4A 1.20 50 40 1.00 VGS=4.5V 30 20 VGS=2.5V, 5.5A 0.80 10 VGS=10V 0 0.60 0 5 10 15 20 25 30 -50 40 -25 0 25 50 59 75 100 125 150 175 142 (°C) Temperature Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.E+02 1.E+01 ID=7.3A 35 1.E+00 125°C IS (A) 30 RDS(ON) (mΩ ) 2 1.E-01 125°C 25 -40°C 1.E-02 20 25°C 1.E-03 25°C 15 1.E-04 10 1.E-05 3 4 5 6 7 8 9 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 www.aosmd.com AO4622 N-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1400 1200 VDS=10V ID=7.3A Ciss 1000 Capacitance (pF) VGS (Volts) 8 6 4 800 1.4 600 Coss 400 494 692 2 593 830 200 Crss 0 0 0 3 6 Qg (nC) 9 12 Figure 7: Gate-Charge Characteristics 0 15 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 20 193 18 100.0 50 10µs 1ms 100µ 40 10ms RDS(ON) limited 1.0 Power (W) ID (Amps) 10.0 1 0.1s 10s 0.1 20 DC TJ(Max)=150°C TA=25°C 10 0.0 0.1 1 10 0 0.0001 100 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 Zθ JA Normalized Transient Thermal Resistance TJ(Max)=150°C TA=25°C 30 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4622 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R esistive S w itchin g T e st C ircu it & W avefo rm s RL Vds V ds DUT V gs 90% + V dd VD C - Rg 1 0% V gs V gs t d(on) tr t d (o ff) t on tf t off D iode R ecovery Test C ircuit & W aveform s Q rr = - Vds + Idt DUT Vgs V ds Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. L Isd + Vdd t rr dI/dt I RM V dd VD C - IF Vds www.aosmd.com AO4622 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -20 IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -25 TJ=55°C VGS=-4.5V, ID=-5A TJ=125°C VGS=-2.5V, ID=-4.2A gFS Forward Transconductance VDS=-5V, ID=-5A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Units -1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max V VDS=-16V, VGS=0V IDSS RDS(ON) Typ -5 ±100 nA -0.9 -0.5 V 44 53 59 71 67 87 mΩ -1 V -2.5 A 960 pF A 13 -0.76 800 VGS=0V, VDS=-10V, f=1MHz 131 6.7 mΩ S pF 103 VGS=0V, VDS=0V, f=1MHz µA pF 10 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) 15.5 nC Qg(4.5V) Total Gate Charge (4.5V) 7.4 nC Qgs Gate Source Charge 1.3 nC Qgd Gate Drain Charge 2.9 nC 4.4 ns VGS=-4.5V, VDS=-10V, ID=-4.5A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=-5A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs 9 Body Diode Reverse Recovery Time VGS=-4.5V, VDS=-10V, RL=2Ω, RGEN=3Ω 7.6 ns 44 ns 13.5 ns 20 ns nC A: The value of R θJA is measured with the device mounted on 1in 22 FR-4 board with 2oz. Copper, in a still air environment with T AA =25°C. The value θJA in any given application depends on the user's board design. value in any a given application depends on thespecific user's specific board design. The current rating is based on the t ≤ 10s thermal resistance B: Repetitive rating, pulse width limited by junction temperature. rating. C. Repetitive The R θJA israting, the sum of the thermal junction to lead R θJL and lead to ambient. RθJL and RθJC are equivalent terms referring to B: pulse width limitedimpedence by junctionfrom temperature. thermal from of junction to drain lead. C. The Rresistance the thermal impedence from junction to lead R θJL and lead to ambient. θJA is the sum 6 are obtained using <300 dutyduty cycle 0.5% max. D. The static characteristics in Figures 1 to 6,12,14 are obtained usingµs 80pulses, µs pulses, cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T AA=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev5: Nov 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4622 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 20 25 -10V -3.5V 20 15 -4.5V VDS=-5V 15 -ID(A) -ID (A) -6V VGS=-2.5V 10 25°C 10 5 5 -40°C 125°C 0 0 0 1 2 3 4 5 0.5 1.0 80 2.0 2.5 3.0 Normalized On-Resistance 1.6 70 VGS=-2.5V RDS(ON) (mΩ ) 1.5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 60 50 VGS=-4.5V 40 1.4 VGS=-2.5V ID=-5A 1.2 VGS=-4.5V ID=-4.2A 1 0.8 0.6 30 0 5 10 15 20 -50 25 -25 0 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 80 1.0E+02 ID=-5A 1.0E+01 1.0E+00 125°C 1.0E-01 -IS (A) RDS(ON) (mΩ ) 60 125°C 1.0E-02 1.0E-03 40 25°C 1.0E-04 25°C -40°C 1.0E-05 1.0E-06 20 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4622 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 1250 10 1000 VDS=-10V ID=-5A Capacitance (pF) -VGS (Volts) 8 6 4 2 750 500 Coss 250 0 Crss 0 0 4 8 12 16 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics 100 60 TJ(Max)=150°C TA=25°C 50 10µs 10 1ms 100µ 10ms RDS(ON) limited 1 Power (W) ID (Amps) Ciss 0.1s 10s 0 DC 30 20 1s TJ(Max)=150°C TA=25°C 10 0 0.1 40 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000 www.aosmd.com AO4622 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC Qgd + + DUT Qgs Vds VDC Vgs Ig Charge Resistive Switching Test Circuit & W aveform s RL Vds t off t on td(on) Vgs - D UT Vgs t d(off) tr 90% Vdd VDC tf + Rg Vgs 10% Vds Diode Recovery Test Circuit & W aveform s Q rr = - Idt Vds + D UT Vgs Vds - Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. -Isd + Vdd t rr dI/dt -I R M Vdd VD C - -I F -Vds www.aosmd.com