A-POWER AP2R403AGMT-HF

AP2R403AGMT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ SO-8 Compatible with Heatsink
▼ Low On-resistance
30V
RDS(ON)
2.4mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
150A
S
D
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on□
resistance and cost-effectiveness.
D
D
D
®
The PMPAK 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink and
lower profile.
S
S
S
G
PMPAK® 5x6
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+12
V
[email protected]=25℃
Continuous Drain Current (Chip), V GS @ 10V
[email protected]=25℃
[email protected]=70℃
150
A
3
36.8
A
3
29.5
A
280
A
83.3
W
5
W
28.8
mJ
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
[email protected]=25℃
Total Power Dissipation
4
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
Units
1.5
℃/W
25
℃/W
1
201108081
AP2R403AGMT-HF
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=20A
-
1.83
2.4
mΩ
VGS=4.5V, ID=20A
-
2.4
3.3
mΩ
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
1.5
3
VDS=10V, ID=20A
-
80
-
S
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+12V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=20A
-
81
130
nC
Qgs
Gate-Source Charge
VDS=15V
-
20
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
40
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
22
-
ns
tr
Rise Time
ID=1A
-
14
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
115
-
ns
tf
Fall Time
VGS=10V
-
55
-
ns
Ciss
Input Capacitance
VGS=0V
-
Coss
Output Capacitance
VDS=15V
-
810
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
750
-
pF
Rg
Gate Resistance
f=1.0MHz
-
0.7
1.4
Ω
Min.
Typ.
IS=20A, VGS=0V
-
-
1.2
V
10200 16320
pF
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
40
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
50
-
nC
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
2
o
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec, 60 C/W at steady state.
o
4.Starting Tj=25 C, VDD=25V, L=0.1mH, RG=25Ω, IAS=24A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2R403AGMT-HF
160
300
10V
7.0V
6.0V
5.0V
V G = 4.0 V
ID , Drain Current (A)
250
200
10V
7.0V
6.0V
5.0V
V G =4.0V
o
T C =150 C
ID , Drain Current (A)
o
T C =25 C
150
100
120
80
40
50
0
0
0
2
4
6
8
0.0
2.0
3.0
4.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
3.2
I D =20A
V G =10V
I D =20A
T C =25 o C
Normalized RDS(ON)
2.8
RDS(ON) (mΩ)
1.0
V DS , Drain-to-Source Voltage (V)
2.4
1.6
1.2
0.8
2
0.4
1.6
2
4
6
8
-50
10
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
20
I D =250uA
T j =25 o C
T j =150 o C
12
Normalized VGS(th) (V)
IS(A)
16
8
1.2
0.8
0.4
4
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2R403AGMT-HF
f=1.0MHz
12000
I D =20A
V DS =15V
C iss
10000
6
8000
C (pF)
VGS , Gate to Source Voltage (V)
8
4
6000
4000
2
2000
C oss
C rss
0
0
0
40
80
120
1
160
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
Operation in this
area limited by
RDS(ON)
100us
ID (A)
100
1ms
10
10ms
100ms
DC
T C =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x R thjc + T c
0.01
Single Pulse
1
0.01
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
160
ID , Drain Current (A)
VG
120
QG
4.5V
80
QGS
QGD
40
Charge
Q
0
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 11. Maximum Continuous Drain
Current v.s. Case Temperature
Fig 12. Gate Charge Waveform
4