A-POWER AP4085I

AP4085I
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
500V
RDS(ON)
0.43Ω
ID
G
16A
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
G
D
TO-220CFM(I)
S
The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage
±30
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
16
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
11
A
60
A
40
W
0.31
W/℃
159
mJ
16
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
2.5
℃/W
65
℃/W
201022073-1/4
AP4085I
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
500
-
-
V
RDS(ON)
Static Drain-Source On-Resistance3
VGS=10V, ID=8A
-
-
0.43
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
3
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=8A
-
6.3
-
S
IDSS
Drain-Source Leakage Current
VDS=400V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=±30V
-
-
±100
nA
ID=16A
-
48
77
nC
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=200V
-
9
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
32
-
nC
VDD=200V
-
48
-
ns
3
td(on)
Turn-on Delay Time
tr
Rise Time
ID=8A
-
134
-
ns
td(off)
Turn-off Delay Time
RG=50Ω,VGS=10V
-
195
-
ns
tf
Fall Time
RD=25Ω
-
121
-
ns
Ciss
Input Capacitance
VGS=0V
-
1205 1930
pF
Coss
Output Capacitance
VDS=30V
-
255
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
3
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=16A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=16A, VGS=0V
-
630
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
13
-
uC
Notes:
1.Pulse width limited by Max junction temperature.
2.Starting Tj=25oC , VDD=99V , L=1mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP4085I
30
16
o
T C =150 C
10 V
9.0 V
12
ID , Drain Current (A)
ID , Drain Current (A)
10V
9.0 V
8.0 V
7.0V
o
T C =25 C
8.0 V
20
7.0V
10
8
V G = 6.0V
4
V G = 6 . 0V
0
0
0.0
4.0
8.0
12.0
16.0
20.0
0.0
4.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
12.0
16.0
20.0
24.0
Fig 2. Typical Output Characteristics
2.8
1.2
I D =8A
V G =10V
2.4
1.1
Normalized RDS(ON)
Normalized BVDSS (V)
8.0
V DS , Drain-to-Source Voltage (V)
1
2.0
1.6
1.2
0.9
0.8
0.4
0.8
-50
0
50
100
-50
150
T j , Junction Temperature ( o C)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Temperature
1.5
8
1.3
T j =150 o C
Normalized VGS(th) (V)
10
T j =25 o C
IS(A)
6
4
1.1
0.9
0.7
2
0.5
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP4085I
10
I D =16A
V DS =200V
C iss
1000
8
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
10000
12
6
C oss
100
4
C rss
2
10
0
0
10
20
30
40
50
1
60
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
33
37
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
100us
ID (A)
10
1ms
10ms
1
100ms
1s
DC
o
0
T C =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
100
0.2
0.1
0.1
0.05
0.02
PDM
0.01
0.01
t
T
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
0.001
0
0.1
1
10
100
1000
0.00001
0.0001
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
V DS ,Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220CFM
E
A
Millimeters
SYMBOLS
c2
φ
L4
MIN
NOM
MAX
A
4.50
4.70
4.90
A1
2.30
2.65
3.00
b
b1
c
c2
0.50
0.70
0.90
0.95
1.20
1.50
0.45
0.65
0.80
2.30
2.60
2.90
E
9.70
10.00 10.40
L3
2.91
3.41
L4
14.70 15.40 16.10
φ
e
L3
b1
A1
b
c
----
3.20
----
----
2.54
----
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220CFM
Part Number
LOGO
4085I
YWWSSS
3.91
Package Code
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence