A-POWER AP02N70EJ

AP02N70EJ
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ ESD Improved Capability
G
▼ Simple Drive Requirement
BVDSS
700V
RDS(ON)
7Ω
ID
1.6A
S
Description
G
D
TO-251(J)
S
AP02N70 from APEC provide the designer with the best combination
of fast switching , low on-resistance and cost-effectiveness.
The TO-251 package is widely preferred for commercial-industrial
through hole applications and suited for AC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
700
V
VGS
Gate-Source Voltage
±20
V
[email protected]=25℃
Continuous Drain Current, V GS @ 10V
1.6
A
[email protected]=100℃
Continuous Drain Current, V GS @ 10V
1
A
6.4
A
45
W
13
mJ
1.6
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
2.8
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data & specifications subject to change without notice
1
200712241
AP02N70EJ
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
3
Min.
Typ.
Max. Units
VGS=0V, ID=1mA
700
-
-
V
VGS=10V, ID=0.8A
-
-
7
Ω
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=0.8A
-
0.65
-
S
IDSS
Drain-Source Leakage Current
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=480V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±20V
-
-
±10
uA
ID=0.8A
-
17
30
nC
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=560V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
11
-
nC
3
td(on)
Turn-on Delay Time
VDD=350V
-
10
-
ns
tr
Rise Time
ID=0.8A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=4.7Ω,VGS=10V
-
21
-
ns
tf
Fall Time
RD=438Ω
-
15
-
ns
Ciss
Input Capacitance
VGS=0V
-
170
300
pF
Coss
Output Capacitance
VDS=25V
-
30
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
20
-
pF
Min.
Typ.
IS=1.6A, VGS=0V
-
-
1.5
IS=1.6A, VGS=0V,
-
340
-
ns
-
nC
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage
3
3
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
dI/dt=100A/µs
-
2550
Max. Units
V
Notes:
1.Pulse width limited by Max. junction temperature.
o
2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25Ω , IAS=1.6A.
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
AP02N70EJ
2
2
10V
9.0V
8.0V
7.0V
ID , Drain Current (A)
2
10V
9.0V
8.0V
7.0V
o
T C =150 C
2
ID , Drain Current (A)
o
T C =25 C
2
V G =6.0V
1
1
V G =6.0V
1
1
0
0
0
0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
0.0
4.0
V DS , Drain-to-Source Voltage (V)
8.0
12.0
16.0
20.0
24.0
28.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.4
1.6
1.2
Normalized RDS(ON)
Normalized BVDSS (V)
I D =0.8A
V G =10V
1
1.2
0.8
0.8
0.4
0.6
-50
0
50
100
-50
150
0
50
100
150
T j , Junction Temperature ( ℃ )
Tj , Junction Temperature ( ℃ )
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
5
1.2
T j =150 o C
o
T j =25 C
4
Normalized VGS(th) (V)
1.1
IS(A)
3
2
1
1.0
0.9
0.8
0
0.7
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
-25
0
25
50
75
100
125
150
T j , Junction Temperature ( ℃ )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP02N70EJ
f=1.0MHz
12
1000
I D =0.8A
VGS , Gate to Source Voltage (V)
10
8
C (pF)
V DS =560V
6
C iss
100
4
C oss
2
C rss
10
0
0
4
8
12
16
20
1
24
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
100us
ID (A)
1
1ms
10ms
100ms
DC
0.1
o
T C =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T c
Single Pulse
0.01
0.01
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
D
Millimeters
A
c1
SYMBOLS MIN
D1
NOM
MAX
Original Original
E2
E1
E
A1
B2
F
B1
Original
A
2.10
2.30
2.50
A1
0.60
1.20
1.80
B1
0.40
0.60
0.80
B2
0.60
0.95
1.25
c
c1
0.40
0.50
0.65
0.40
0.55
0.70
D
6.00
6.50
7.00
D1
4.80
5.40
5.90
E1
5.00
5.50
6.00
E2
1.20
1.70
2.20
e
----
2.30
----
F
7.00
---
16.70
1.All Dimensions Are in Millimeters.
c
e
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-251
Part Number
02N70EJ
LOGO
YWWSSS
Package Code
Date Code (YWWSSS)
Y :Last Digit Of The Year
WW :Week
SSS :Sequence
5