A-POWER AP2761I-A_07

AP2761I-A
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
BVDSS
650V
RDS(ON)
1Ω
ID
10A
G
S
Description
AP2761 series are specially designed as main switching devices for universal
90~265VAC off-line AC/DC converter applications.
TO-220CFM type provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
±30
V
[email protected]=25℃
Continuous Drain Current, V GS @ 10V
10
A
[email protected]=100℃
Continuous Drain Current, V GS @ 10V
6.4
A
36
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
37
W
Linear Derating Factor
0.3
W/℃
EAS
Single Pulse Avalanche Energy2
65
mJ
IAR
Avalanche Current
10
A
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
3.4
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
65
℃/W
Data & specifications subject to change without notice
200202074-1/4
AP2761I-A
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
650
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.6
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5A
-
-
1
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
4.8
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=480V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±30V
-
-
±100
nA
ID=10A
-
53
-
nC
o
IGSS
3
VGS=0V, ID=1mA
Min.
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=520V
-
10
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
15
-
nC
3
td(on)
Turn-on Delay Time
VDD=320V
-
16
-
ns
tr
Rise Time
ID=10A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
82
-
ns
tf
Fall Time
RD=32Ω
-
36
-
ns
Ciss
Input Capacitance
VGS=0V
-
2770
-
pF
Coss
Output Capacitance
VDS=15V
-
320
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
8
-
pF
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
3
Test Conditions
IS=10A, VGS=0V
Max. Units
1.5
V
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
610
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
8.64
-
µC
Notes:
1.Pulse width limited by max. junction temperature.
o
2.Starting Tj=25 C , VDD=50V , L=1.2mH , RG=25Ω , IAS=10A.
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP2761I-A
14
8
12
6
8
6
5.0V
4
4.5V
4
V G =4.0V
2
V G =4.0V
2
0
0
0
5
10
15
20
0
25
V DS , Drain-to-Source Voltage (V)
10
15
20
25
Fig 2. Typical Output Characteristics
3
1.2
I D =5A
V G =10V
1.1
2
Normalized RDS(ON)
Normalized BVDSS (V)
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
0.9
0.8
1
0
-50
0
50
100
150
-50
0
50
100
150
T j , Junction Temperature ( o C )
o
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
100
5
10
4
T j = 150 o C
T j = 25 o C
VGS(th) (V)
IS (A)
10V
5.0V
10
ID , Drain Current (A)
ID , Drain Current (A)
T C =150 o C
10V
6.0V
o
T C =25 C
1
3
0.1
2
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1
-50
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP2761I-A
16
f=1.0MHz
10000
C iss
V DS =330V
V DS =410V
V DS =520V
12
C oss
C (pF)
VGS , Gate to Source Voltage (V)
I D =10A
8
100
4
C rss
1
0
0
20
40
60
1
80
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthjc)
Duty factor=0.5
10
ID (A)
10us
100us
1
1ms
T c =25 o C
Single Pulse
10ms
100ms
0.1
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
10
100
1000
10000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) t
f
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4