A-POWER AP9479GM-HF

AP9479GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Charge
D
D
D
▼ Fast Switching Characteristic
BVDSS
60V
RDS(ON)
45mΩ
ID
5.6A
G
▼ RoHS Compliant
SO-8
S
S
S
Description
D
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
S
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
60
V
+25
V
3
5.6
A
3
4.5
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
30
A
[email protected]=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
50
℃/W
1
200810202
AP9479GM-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
60
-
-
V
-
0.06
-
V/℃
VGS=10V, ID=5A
-
-
45
mΩ
VGS=4.5V, ID=3A
-
-
60
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=5V, ID=5A
-
8
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=48V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+25V
-
-
+100
nA
ID=5A
-
11
18
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
2.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6
-
nC
VDS=30V
-
9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
4
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
24
-
ns
tf
Fall Time
RD=30Ω
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
960
1540
pF
Coss
Output Capacitance
VDS=25V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.3
2
Ω
Min.
Typ.
IS=2A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=5A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
31
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9479GM-HF
30
30
10V
7.0 V
5.0V
4.5V
20
10
V G =3.0V
20
V G =3.0V
10
0
0
0
2
4
0
6
2
4
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
55
1.8
ID=5A
V G =10V
ID=3A
T A =25 ℃
Normalized RDS(ON)
50
RDS(ON) (mΩ)
10V
7.0V
5.0V
4.5V
o
T A = 150 C
ID , Drain Current (A)
ID , Drain Current (A)
T A = 25 o C
45
1.4
1.0
40
0.6
35
2
4
6
8
-50
10
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
Normalized VGS(th) (V)
6
IS(A)
4
T j =150 o C
T j =25 o C
2
0
1.2
0.8
0.4
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9479GM-HF
f=1.0MHz
15
10000
V DS = 30 V
V DS = 38 V
V DS = 48 V
9
1000
C iss
100
C oss
C rss
C (pF)
VGS , Gate to Source Voltage (V)
ID=5A
12
6
3
10
0
0
10
20
1
30
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
10
Normalized Thermal Response (Rthja)
100
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
100us
1ms
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 125℃/W
DC
0.001
0.01
0.1
1
10
100
1000
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
ID , Drain Current (A)
V DS =5V
o
T j =25 C
QG
T j =150 o C
20
4.5V
QGS
QGD
10
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4