AP9477GK-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Charge
S
▼ Fast Switching Characteristic
D
▼ RoHS Compliant & Halogen-Free
SOT-223
BVDSS
60V
RDS(ON)
90mΩ
ID
4.1A
G
Description
D
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
60
V
+20
V
Continuous Drain Current
3
4.1
A
Continuous Drain Current
3
3.3
A
20
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2.8
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
45
℃/W
1
201007292
AP9477GK-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
VGS=0V, ID=250uA
Min.
Typ.
Max. Units
60
-
-
V
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS/∆Tj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.057
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=4A
-
-
90
mΩ
VGS=4.5V, ID=2A
-
-
110
mΩ
0.8
-
2.5
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=4A
-
4
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=70 C) VDS=48V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=4A
-
6.5
10.5
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.5
-
nC
2
td(on)
Turn-on Delay Time
VDS=30V
-
5
-
ns
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
17
-
ns
tf
Fall Time
RD=30Ω
-
3.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
510
820
pF
Coss
Output Capacitance
VDS=25V
-
55
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
40
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
1.8
Ω
Min.
Typ.
IS=2.1A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=4A, VGS=0V,
-
27
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
31
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 150 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9477GK-HF
20
20
o
T A =25 C
16
ID , Drain Current (A)
ID , Drain Current (A)
16
10V
7.0V
5.0V
4.5V
T A =150 o C
10V
7.0V
5.0V
4.5V
12
8
12
8
V G =3.0V
4
4
V G =3.0V
0
0
0
2
4
6
0
8
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6
Fig 2. Typical Output Characteristics
2.2
110
ID=4A
V G =10V
ID=2A
T A =25 o C
Normalized RDS(ON)
100
RDS(ON) (mΩ)
4
V DS , Drain-to-Source Voltage (V)
90
80
1.8
1.4
20
1.0
70
60
0.6
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
160.0
6
135.0
T j =150 o C
RDS(ON) (mΩ)
IS (A)
4
T j =25 o C
110.0
V GS =4.5V
2
85.0
V GS =10V
0
60.0
0
0.4
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
0
4
8
12
16
20
I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
3
AP9477GK-HF
f=1.0MHz
10000
10
I D =4A
V DS =32V
V DS =40V
V DS =48V
8
1000
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C iss
100
4
C oss
C rss
2
10
0
0
4
8
12
1
16
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
10
100us
1ms
1
10ms
100ms
0.1
1s
T A =25 o C
Single Pulse
Normalized Thermal Response (Rthja)
100
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 150℃/W
DC
0.01
0.001
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
VG
ID , Drain Current (A)
V DS =5V
15
T j =25 o C
QG
T j =150 o C
4.5V
QGS
10
QGD
5
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4