COMSET 2N2906

PNP 2N2906 – 2N2906A
GENERAL PURPOSE AMPLIFIERS TRANSISTORS
The 2N2906 and 2N2906A are PNP transistors mounted in TO-18 metal package.
They are intended for high speed switching and general purpose applications.
NPN complements are 2N2221 and 2N2221A .
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Ratings
Unit
2N2906
2N2906A
-40
-60
VCEO
Collector-Emitter Voltage (IB=0)
VCBO
Collector-Base Voltage (IE=0)
-60
V
VEBO
Emitter-Base Voltage (IC=0)
-5
V
IC
Collector Current
-600
mA
ICM
Peak Collector Current
-800
mA
IBM
Peak Base Current
-200
mA
Tamb = 25°
0.4
W
Tcase= 25°
1.2
W
200
°C
PD
V
Total Power Dissipation
TJ
Junction Temperature
TStg
Storage Temperature range
-65 to +150
°C
Tamb
Operating Ambient Temperature
-65 to +150
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJ-a
Thermal Resistance, Junction to ambient in free air
438
°C/W
RthJ-c
Thermal Resistance, Junction to case
146
°C/W
PNP 2N2906 – 2N2906A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICBO
ICBO
IEBO
VCEO
VCBO
VEBO
Ratings
Collector Cutoff
Current
Collector Cutoff
Current
Emitter Cutoff
Current (*)
Collector Emitter
Breakdown Voltage
Collector Base
Breakdown Voltage
Emitter Base
Breakdown Voltage
Test Condition(s)
VCB= -50 V Ta= 25°C
IE= 0
Ta= 150°C
VEB= -5 V, IC= 0
IC= -10 mA, IB= 0
IC= -10 µA, IE= 0
IE= -10 µA, IC= 0
IC= -0.1 mA, VCE= -10 V
IC= -1 mA, VCE= -10 V
hFE
DC Current Gain
IC= -10 mA, VCE= -10 V
IC= -150 mA, VCE= -10 V
IC= -500 mA, VCE= -10 V
VCE(SAT)
VBE(SAT)
fT
td
tr
Cc
Ce
Collector-Emitter
saturation Voltage
(*)
Base-Emitter
saturation Voltage
(*)
IC= -150 mA, IB= -15 mA
IC= -500 mA, IB= -50 mA
IC= -150 mA, IB= -15 mA
IC= -500 mA, IB= -50 mA
IC=-50 mA, VCE=-20 V
f= 100MHz (*)
IC=-150 mA ,IB =-15 mA
-VCC=-30 V
IE= Ie = 0 ,VCB= -10 V
f = 1 MHz
I = I = 0 ,VEB= -2 V
Emitter capacitance C c
f = 1 MHz
Transition
frequency
Delay time
Rise time
Collector
capacitance
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
Min
Typ
Max
Unit
-
-
-10
-20
-10
-20
-
-
-50
nA
-60
-40
-
-
V
-60
-
-
V
-5
-
-
V
40
20
40
25
40
35
-
-
40
-
120
40
20
-
-
-
-
-0.4
-
-
-1.6
-
-
-1.3
-
-
-2.6
200
-
-
MHz
-
-
10
40
ns
-
-
8
pF
-
-
30
pF
nA
µA
-
V
(*) Pulse conditions : tp < 300 µs, δ =2%
01/10/2012
COMSET SEMICONDUCTORS
2|3
PNP 2N2906 – 2N2906A
SWITCHING TIME
Symbol
ton
td
tr
toff
Ts
Tf
Ratings
Turn-on time
Delay time
Rise time
Turn-off time
Storage time
Fall time
Test Condition(s)
ICon= -150 mA
IBon = -15 mA
IBoff= 15 mA
Min
-
Typ
-
Max
45
15
35
300
250
50
Unit
ns
ECHANICAL DATA CASE TO-18 (PNP)
DIMENSIONS (mm)
min
A
B
C
D
E
F
G
H
I
L
max
12.7
0.9
2.54
45°
Pin 1 :
Pin 2 :
Pin 3 :
Case :
0.49
5.3
4.9
5.8
1.2
1.16
-
emitter
base
Collector
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
01/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
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