COMSET 2N2328

2N2327 thur 2N2329
SILICON THYRISTORS
All-diffused PNPN thyristors designed for grating operation in mA/µA signal
or detection circuits
Compliance to RoHS.
MAXIMUM RATINGS (*)
TJ=125°C unless otherwise noted, RGK=1000Ω
Symbol
Ratings
VRSM(REP)
Peak reverse blocking voltage (1)
VRSM(NON-
Non-repetitive peak blocking reverse
voltage (t<5.0 ms)
Forward Current RMS
(all conduction angles)
Peak Surge Current
(One-Half Cycle, 60Hz)
No Repetition Until Thermal Equilibrium
is Restored.
REP)
IT(RMS)
ITSM
2N2327
2N2328
2N2329
Unit
250
300
400
V
350
400
500
V
1.6
A
15
A
PGM
Peak Gate Power – Forward
0.1
W
PG(AV)
Average Gate Power - Forward
0.01
W
IGM
Peak Gate Current – Forward
0.1
A
VGFM
Peak Gate Voltage - Forward
6.0
V
VGRM
Peak Gate Voltage - Reverse
6.0
V
TJ
TSTG
Operating Junction Temperature Range
Storage Temperature Range
-65 to +125
-65 to +150
°C
12/11/2012
COMSET SEMICONDUCTORS
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2N2327 thur 2N2329
ELECTRICAL CHARACTERISTICS (*)
TJ=25°C unless otherwise noted, RGK=1000Ω
Symbol
VDRM
IRRM
IDRM
VT
IGT
VGT
IH
Ratings
Peak Forward Blocking Voltage
Min :
(1)
Peak Reverse Blocking Current
(Rated VDRM, TJ =125°C)
Peak Forward Blocking Current
(Rated VDRM, TJ =125°C)
Forward « on » Voltage
IT =1.0 A Peak
IT =1.0 A Peak
TC =85°C
Gate Trigger Current (2)
Anode Voltage=6.0 Vdc, RL=100Ω
Anode Voltage=6.0 Vdc, RL=100Ω
TC=-65°C
Gate Trigger Voltage
Anode Voltage=6.0 V, RL=100Ω
Anode Voltage=6.0 V, RL=100Ω
TC=-65°C
VDRM = Rated, RL=100Ω
TJ=125°C
Holding Current
Anode Voltage=6.0 V
Anode Voltage=6.0 V
TC=-65°C
Anode Voltage=6.0 V
TC=125°C
2N2327
2N2328
2N2329
Unit
250
300
400
V
µA
Max : 100
µA
Max : 100
Max : 1.5
V
Max : 2.0
Max : 200
µA
Max : 350
Max : 0.8
V
Max : 1.0
Min : 0.1
Max : 2.0
mA
Max : 3.0
Min : 0.15
(*) JEDEC Registered Values
(1) VRSM and VDRM can be applied for all types on a continuous dc basis without incurring damage.
(2) RGK current is not included in measurement.
12/11/2012
COMSET SEMICONDUCTORS
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2N2327 thur 2N2329
MECHANICAL DATA CASE TO-39
DIMENSIONS (mm)
min
max
A
8.50
9.39
B
7.74
8.50
C
6.09
6.60
D
0.40
0.53
E
-
0.88
F
2.41
2.66
G
4.82
5.33
H
0.71
0.86
J
0.73
1.02
K
12.70
-
L
42°
48°
Pin 1 :
kathode
Pin 2 :
Gate
Pin 3 :
Anode
Case :
anode
Revised October 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
12/11/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
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