COMSET 2N2324

2n2322 to 2n2326
SILICON THYRISTORS
All-diffused PNPN thyristors designed for grating operation in mA/µA signal
or detection circuits
Compliance to RoHS.
MAXIMUM RATINGS (*)
TJ=125°C unless otherwise noted, RGK=1000Ω
Symbol
VRRM(REP)
VRSM(NONREP)
IT(RMS)
ITSM
Ratings
Peak reverse blocking voltage
(*)
Non-repetitive peak blocking
reverse voltage (t<5.0 ms)
Forward Current RMS (all
conduction angles)
Peak Surge Current
(One-Half Cycle, 60Hz)
No Repetition Until Thermal
Equilibrium is Restored.
2N2322
2N2323
2N2324
2N2325
2N2326
Unit
25
50
100
150
200
V
40
75
150
225
300
V
1.6
A
15
A
PGM
Peak Gate Power – Forward
0.1
W
PG(AV)
Average Gate Power Forward
0.01
W
IGM
Peak Gate Current – Forward
0.1
A
VGFM
Peak Gate Voltage - Forward
6.0
V
VGRM
Peak Gate Voltage - Reverse
6.0
V
TJ
Operating Junction
Temperature Range
-65 to +125
TSTG
Storage Temperature Range
-65 to +150
12/11/2012
°C
COMSET SEMICONDUCTORS
1|3
2n2322 to 2n2326
ELECTRICAL CHARACTERISTICS (*)
TJ=25°C unless otherwise noted, RGK=1000Ω
Symbol
VDRM
IRRM
IDRM
VTM
IGT
VGT
IH
Ratings
2N2322 2N2323 2N2324 2N2325 2N2326 Unit
Peak Forward Blocking
Min :
Voltage (1)
Peak Reverse Blocking
Current
(Rated VDRM, TJ =125°C)
Peak Forward Blocking
Current
(Rated VDRM, TJ =125°C)
Forward « on » Voltage
ITM=1.0 A Peak
ITM =3.14 A Peak
TC =85°C
Gate Trigger Current (2)
Anode Voltage=6.0 Vdc
RL=100Ω
Anode Voltage=6.0 Vdc
RL=100Ω, TC=-65°C
Gate Trigger Voltage
Anode Voltage=6.0 V
RL=100Ω
Anode Voltage=6.0 V
RL=100Ω, TC=-65°C
VDRM = Rated
RL=100Ω, TJ=125°C
Holding Current
Anode Voltage=6.0 V
Anode Voltage=6.0 V
TC=-65°C
Anode Voltage=6.0 V
TC=125°C
25
50
100
150
200
V
Max : 100
µA
Max : 100
µA
Max : 1.5
V
Max : 2.0
Max : 200
µA
Max : 350
Max : 0.8
V
Max : 1.0
Min : 0.1
Max : 2.0
Max : 3.0
mA
Min : 0.15
(*) JEDEC Registered Values
(1) VRSM and VDRM can be applied for all types on a continuous dc basis without incurring
damage.
(2) RGK current is not included in measurement.
12/11/2012
COMSET SEMICONDUCTORS
2|3
2n2322 to 2n2326
MECHANICAL DATA CASE TO-39
DIMENSIONS (mm)
min
max
A
8.50
9.39
B
7.74
8.50
C
6.09
6.60
D
0.40
0.53
E
-
0.88
F
2.41
2.66
G
4.82
5.33
H
0.71
0.86
J
0.73
1.02
K
12.70
-
L
42°
48°
Pin 1 :
kathode
Pin 2 :
Gate
Pin 3 :
Anode
Case :
anode
Revised October 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
12/11/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
3|3