SEMICONDUCTORS BU806 SILICON DARLINGTON POWER TRANSISTORS They are silicon epitaxial planar NPN power transistors in Darlington configuration mounted in a TO-220 plastic package. They are high voltage, high current devices for fast switching applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit V VCBO Collector-Base Voltage 400 VCEV Collector-Emitter Voltage 400 VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current 8 A ICM Collector Peak Current 15 A IB Base Current 2 A PT Power Dissipation at Case Temperature 60 W tJ Junction Temperature ts Storage Temperature range Tmb < 25°C 150 °C -65 to +150 THERMAL CHARACTERISTICS Symbol Ratings RthJC From Junction to Case Thermal Resistance RthJA From Junction to Free-Air Thermal Resistance 29/09/2012 COMSET SEMICONDUCTORS Value 2.08 70 Unit °C/W 1/3 SEMICONDUCTORS BU806 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit 200 - - V VCEO Collector-Emitter Breakdown Voltage (*) IC= 100 mA, IB= 0 ICEOV Collector Cutoff Current VCE = 400 V, VBE(off) = 6 V - - 100 µA ICES Collector Cutoff Current VCE = 400 V, VBE(off) = 0 V - - 100 µA IEBO Emitter Cutoff Current VEB= 6 V, IC= 0 - - 3 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC= 5 A, IB= 250 mA - - 1.5 V VBE(SAT) Base-Emitter Saturation Voltage (*) IC= 5 A, IB= 250 mA - - 2.4 V VF Diode forward Voltage (*) IF= 7 A - - 3.5 V Min Typ Max Unit - 0.35 - - 0.55 - - 0.2 - SWITCHING TIMES. Symbol Ratings ton turn-on time ts Storage Time tf Fall Time Test Condition(s) VCC= 100 V; IC= 5 A IB1= 50mA, IB2= 500 mA µs (*) These parameters must be measured using pulse techniques, tp 300 µs, Duty Cycle ∠1.5% 29/09/2012 COMSET SEMICONDUCTORS 2/3 SEMICONDUCTORS BU806 MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) Min. A B C D E F G H L M N P R S T U 9,90 15,65 13,20 6,45 4,30 2,70 2,60 15,75 1,15 3,50 0,46 2,50 4,98 2.49 0,70 Pin 1 : Pin 2 : Pin 3 : Package Max. 10,30 15,90 13,40 6,65 4,50 3,15 3,00 17.15 1,40 3,70 1,37 0,55 2,70 5,08 2.54 0,90 Base Collector Emitter Collector Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 29/09/2012 [email protected] COMSET SEMICONDUCTORS 3/3