CREE CMF10120D

CMF10120D-Silicon Carbide Power MOSFET
Z-FeTTM MOSFET
VDS
= 1200 V
ID(MAX)
= 24 A
N-Channel Enhancement Mode
RDS(on)
Features
•
•
•
•
•
•
Package
High Speed Switching with Low Capacitances
High Blocking Voltage with Low RDS(on)
Easy to Parallel and Simple to Drive
Avalanche Ruggedness
Resistant to Latch-Up
Halogen Free, RoHS Compliant
TO-247-3
Benefits
•
•
•
= 160mΩ Higher System Efficiency
Reduced Cooling Requirements
Increased System Switching Frequency
Applications
•
•
•
•
Solar Inverters
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
Part Number
Package
CMF10120D
TO-247-3
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol
ID
Continuous Drain Current
IDpulse
Value
24
13
Unit
A
Test Conditions
[email protected], TC = 25˚C
A
EAS
Single Pulse Avalanche Energy
1.2
J
ID = 10A, VDD = 50 V,
L = 20 mH
EAR
Repetitive Avalanche Energy
0.8
J
tAR limited by Tjmax
IAR
Repetitive Avalanche Current
10
A
VGS
Gate Source Voltage
-5/+25
V
Ptot
Power Dissipation
134
W
-55 to
+135
˚C
˚C
TL
Solder Temperature
260
Md
Mounting Torque
1
8.8
CMF10120D Rev. A
Fig. 10
Pulse width tP limited by Tjmax
49
Operating Junction and Storage Temperature
Note
[email protected], TC = 100˚C
Pulsed Drain Current
TJ , Tstg
1
Parameter
TC = 25˚C
Fig. 15
ID = 10A, VDD = 50 V, L = 15 mH
tAR limited by Tjmax
TC=25˚C
1.6mm (0.063”) from case for 10s
Nm
M3 or 6-32 screw
lbf-in
Fig. 9
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
V(BR)DSS
VGS(th)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
Transconductance
Ciss
Input Capacitance
Coss
Output Capacitance
V
2.4
3.5
3.1
4.1
VGS = 0V, ID = 50μA
VDS = VGS, ID = 0.5 mA
VDS = VGS, ID = 1.0 mA
VDS = VGS, ID = 0.5 mA, TJ = 135ºC
2.3
V
VDS = VGS, ID = 1.0 mA, TJ = 135ºC
0.5
50
5
150
160
200
190
240
4.2
μA
μA
mΩ
S
3.9
Fig. 11
VDS = 1200V, VGS = 0V
VDS = 1200V, VGS = 0V, TJ = 135ºC
VGS = 20V, VDS = 0V
VGS = 20V, ID = 10A
VGS = 20V, ID = 10A, TJ = 135ºC
VDS= 20V, IDS= 10A
VDS= 20V, IDS= 10A, TJ = 135ºC
Fig. 3
Fig. 6
928
63
7.5
Eoss
Coss Stored Energy
32
Turn-On Delay Time
8.8
Fall Time
21
Turn-Off Delay Time
38
trV
Rise Time
34
RG
Internal Gate Resistance
td(off)V
Note
V
Reverse Transfer Capacitance
tfv
V
Test Conditions
1.8
Crss
td(on)v
Max. Unit
0.25
Drain-Source On-State Resistance
gfs
Typ.
1200
Gate Threshold Voltage
IDSS
RDS(on)
Min.
pF
VGS = 0V
VDS = 800V
Fig. 13
f = 1MHz
μJ
VAC = 25mV
Fig 14
VDD = 800V, VGS = 0/20V
ns
ID = 10A
RG(ext) = 2.5Ω, RL = 40Ω
fig. 17
Timing relative to VDS
13.6
Ω
f = 1MHz, VAC = 25mV
Built-in SiC Body Diode Characteristics
Symbol
Parameter
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irrm
Peak Reverse Recovery Current
Typ.
Max.
Unit
3.5
V
3.1
138
ns
94
nC
1.57
A
Test Conditions
Note
VGS = -5V, IF=5A, TJ = 25ºC
VGS = -2V, IF=5A, TJ = 25ºC
VGS = -5V, IF=10A, TJ = 25ºC
VR = 800V,
diF/dt= 100A/μs
Fig. 22
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
RθJC
Thermal Resistance from Junction to Case
0.66
0.82
RθCS
Case to Sink, w/ Thermal Compound
0.25
RθJA
Thermal Resistance From Junction to Ambient
Unit
Test Conditions
K/W
Note
Fig. 7
40
Gate Charge Characteristics
Symbol
2
Parameter
Typ.
Qgs
Gate to Source Charge
11.8
Qgd
Gate to Drain Charge
21.5
Qg
Gate Charge Total
47.1
CMF10120D Rev. A
Max.
Unit
nC
Test Conditions
VDD = 800V, VGS = 0/20V
ID =10A
Per JEDEC24 pg 27
Note
Fig.12
50
50
45
45
40
40
35
35
30
30
ID (A)
ID (A)
Typical Performance
25
25
20
20
15
15
10
10
5
5
0
0
0
1
2
3
4
5
6
7
8
9
10
11
12
0
1
2
3
4
5
VDS (V)
6
7
8
9
10
11
12
VDS (V)
Figure 1. Typical Output Characteristics TJ = 25ºC
Figure 2. Typical Output Characteristics TJ = 135ºC
350
2
VGS = 20 V
1.8
300
1.6
VGS = 20 V
250
RDS(on) (mΩ)
Normalized RDS(on)
1.4
1.2
1
0.8
0.6
200
135oC
25oC
150
100
0.4
50
0.2
0
0
0
25
50
75
100
125
0
150
5
10
15
20
Figure 3. Normalized On-Resistance vs. Temperature
40
45
50
18
20
VD = 20 V
25
600
TJ = 25oC
20
500
ID = 10 A
ID (A)
RDS(on) (mΩ)
35
30
700
400
300
135oC
15
10
25oC
TJ = 135oC
5
100
0
0
10
12
14
16
18
VGS (V)
Figure 5. On-Resistance vs. Gate Voltage
3
30
Figure 4. On-Resistance vs. Drain Current
800
200
25
ID (A)
TJ (oC)
CMF10120D Rev. A
20
0
2
4
6
8
10
12
14
16
VGS (V)
Figure 6. Typical Transfer Characteristics
Typical Performance
1
100
DC:
tp ≤ 1 µs
0.5
0.3
tp = 10 µs
Limited
by RDS(on)
100E-3
0.1
10
tp = 100 µs
ID (A)
ZthJC (oC/W)
0.05
0.02
10E-3
0.01
tp = 1 ms
1
tp = 10 ms
1E-3
SinglePulse
DC
0.1
100E-6
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1
1
10
100
1000
VDS (V)
tp (s)
Figure 7. Transient Thermal Impedance (Junction - Case)
with Duty Cycle
Figure 8. Safe Operating Area
160
25
140
20
120
ID (A)
PD (W)
100
80
15
10
60
40
5
20
0
0
0
25
50
75
100
125
150
0
25
50
75
TC (oC)
100
125
150
TC (oC)
Figure 9. Power Dissipation Derating Curve
Figure 10. Continuous Current Derating Curve
4.5
25
4
20
ID = 1 mA
3.5
15
VGS (V)
VGS(th) (V)
3
2.5
2
ID = 0.5 mA
1.5
10
ID = 10 A
VDD = 800 V
5
1
0
0.5
0
-75
-50
-25
0
25
50
TJ
75
100
125
Figure 11. Gate Threshold Voltage vs.
Temperature
4
CMF10120D Rev. A
-5
150
(oC)
0
10
20
30
40
50
Gate Charge (nC)
Figure 12. Typical Gate Charge Characteristics
(25°C)
Typical Performance
10000
10000
1000
Capacitance (pF)
Capacitance (pF)
Ciss
Ciss
1000
Coss
100
Crss
Coss
100
10
Crss
10
1
1
0
20
40
60
80
100
120
140
160
180
200
0
100
200
300
400
VDS (V)
500
600
700
800
VDS (V)
Figure 13A and 13B. Typical Capacitances vs. Drain Voltage at VGS = 0V and f = 1 MHz
40
11
VGS = 0/20V
VDD = 50V
L = 20 mH
EAS = 1.2 J
10
9
30
8
2000
7
ID (A)
25
Eoss (µJ)
2500
VDS
20
15
ID
6
1500
5
4
1000
3
10
2
5
0
500
1
0
0
100
200
300
400
500
600
700
0
800
0.001
0.002
0.003
0.004
0
0.006
0.005
Time (sec)
VDS (V)
Figure 15. Typical Unclamped Inductive Switching
Waveforms Showing Avalanche Capability
Figure 14. Typical COSS Stored Energy
80
90
70
tD(off)v
VGS = 0/20V
VDD = 400V
RL = 40 Ω
ID = 10 A
TA = 25oC
60
80
60
50
trv
40
tfv
tD(off)v
VGS = 0/20V
VDD =800V
RL = 80 Ω
ID = 10 A
TA = 25oC
70
Time (nsec)
Time (nsec)
VDS (V)
35
trv
tfv
50
40
30
30
20
10
10
0
0
0
5
10
15
20
25
0
External Gate Resistor (Ω)
Figure 16. Resistive Switching Times vs.
External RG at VDD = 400V, ID = 10A
5
tD(on)v
20
tD(on)v
CMF10120D Rev. A
5
10
15
20
External Gate Resistor (Ω)
Figure 17. Resistive Switching Times vs.
External RG at VDD = 800V, ID = 10A
25
Typical Performance
350
450
400
VGS = 0/20V
RG = 15 Ω Tot
VDD = 800V
L = 856 µH
FWD: C4D05120A
TA = 25oC
250
200
ETOT,SW
150
EOFF
100
EON
300
EON
250
200
150
EOFF
100
50
0
ETOT,SW
350
Switching Energy (µJ)
Switching Energy (µJ)
300
VGS = 0/20V
RG = 20 Ω Tot
VDD = 800V
L = 856 µH
FWD: C4D05120A
ID = 10 A
50
0
4
5
6
7
8
9
10
11
0
25
50
Peak Drain Current (A)
75
Figure 18. Clamped Inductive Switching Energy vs.
Drain Current (Fig. 20)
C4D05120A
5A, 1200V
SiC Schottky
+
800V
42.3μf
-
CMF10120D
Figure 20. Clamped Inductive Switching Waveform Test
Circuit
VDS
90%
10%
td(on)v
tfv
ton
td(off)v
trv
toff
Figure 21. Switching Test Waveforms for Transition times
6
CMF10120D Rev. A
125
150
Figure 19. Clamped Inductive Switching Energy vs.
Junction Temperature (Fig 20)
856μH
VGS
100
TJ (oC)
Test Circuit Diagrams and Waveforms
trr
Qrr= id dt
tx
∫
trr
Ic
856μH
tx
CMF10120D
10% Irr
10% Vcc
+
Vcc
Vpk
800V
Irr
42.3μf
-
Diode Recovery
Waveforms
CMF10120D
t2
Erec= id dt
t1
∫
Diode Reverse
Recovery Energy
t1
Fig 22. Body Diode Recovery Test
t2
Fig 23. Body Diode Recovery Waveform
EA = 1/2L x ID2
FOR OFFICIAL USE ONLY – Not Cleared for Open Release
FOR OFFICIAL USE ONLY – Not Cleared for Open Release
Fig 24. Unclamped Inductive Switching Test Circuit
Fig 25. Unclamped Inductive Switching waveform
for Avalanche Energy
ESD Ratings
7
ESD Test
Total Devices Sampled
Resulting Classification
ESD-HBM
All Devices Passed 1000V
2 (>2000V)
ESD-MM
All Devices Passed 400V
C (>400V)
ESD-CDM
All Devices Passed 1000V
IV (>1000V)
CMF10120D Rev. A
Package Dimensions
Package TO-247-3
POS
X
Z
W
Inches
Min
Max
Min
Max
A
.605
.635
15.367
16.130
B
.800
.831
20.320
21.10
C
.780
.800
19.810
20.320
D
.095
.133
2.413
3.380
E
.046
.052
1.168
1.321
F
.060
.095
1.524
2.410
G
Y
BB
AA
CC
(2)
(1)
(3)
Millimeters
.215 TYP
5.460 TYP
H
.175
.205
4.450
5.210
J
.075
.085
1.910
2.160
K
6˚
21˚
6˚
21˚
L
4˚
6˚
4˚
6˚
M
2˚
4˚
2˚
4˚
N
2˚
4˚
2˚
4˚
P
.090
.100
2.286
2.540
Q
.020
.030
.508
.762
R
9˚
11˚
9˚
11˚
S
9˚
11˚
9˚
11˚
T
2˚
8˚
2˚
8˚
U
2˚
8˚
2˚
8˚
V
.137
.144
3.487
3.658
W
.210
.248
5.334
6.300
X
.502
.557
12.751
14.150
Y
.637
.695
16.180
17.653
Z
.038
.052
0.964
1.321
AA
.110
.140
2.794
3.556
BB
.030
.046
0.766
1.168
CC
.161
.176
4.100
4.472
Recommended Solder Pad Layout
Part Number
Package
Marking
CMF10120D
TO-247-3
CMF10120
TO-247-3
“The levels of environmentally sensitive, persistent biologically toxic (PBT), persistent organic pollutants (POP), or otherwise restricted materials in this product are below the
maximum
concentration
values (alsosensitive,
referred to persistent
as the threshold
limits) permitted
for suchpersistent
substances,organic
or are used
in an exempted
in accordance
with
EU Directive
“The
levels
of environmentally
biologically
toxic (PBT),
pollutants
(POP), application,
or otherwise
restricted
materials
in
2002/95/EC
the below
restriction
the use of certain
hazardousvalues
substances
in referred
electrical and
electronic
equipmentlimits)
(RoHS),
as amended
April 21, 2006.or are used in an
this
productonare
theofmaximum
concentration
(also
to as
the threshold
permitted
forthrough
such substances,
exempted application, in accordance with EU Directive 2002/95/EC on the restriction of the use of certain hazardous substances in electrical and electronic
equipment (RoHS), as amended through April 21, 2006.”
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems.
Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks and Z-REC and Z-FET are trademarks of Cree, Inc.
8
CMF10120D Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
Mouser Electronics
Authorized Distributor
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Cree, Inc.:
CMF10120D