CREE CPM2-1200

VDS
1200 V
ID @ 25˚C 31.6 A
CPM2-1200-0080B
Silicon Carbide Power MOSFET
TM
Z-FET MOSFET
RDS(on)
80 mΩ
N-Channel Enhancement Mode
Features
•
•
•
•
•
•
Package
High Speed Switching with Low Capacitances
High Blocking Voltage with Low RDS(on)
Easy to Parallel and Simple to Drive
Avalanche Ruggedness
Resistant to Latch-Up
Halogen Free, RoHS Compliant
Benefits
•
•
•
Higher System Efficiency
Reduced Cooling Requirements
Increased System Switching Frequency
Applications
•
•
•
•
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Solar Inverters
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
UPS
Part Number
Package
CPM2-1200-0080B
Die
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
IDS (DC)
Parameter
Continuous Drain Current
IDS (pulse) Pulsed Drain Current
VGS
Gate Source Voltage
TJ , Tstg
TL
Operating Junction and Storage Temperature
Solder Temperature
Note 1: Assumes a RθJC < 0.60 K/W
f
1
CPM2-1200-0080B Rev. -
Value
31.6
20
Unit
A
Test Conditions
[email protected] V, TC = 25˚C
[email protected] V, TC = 100˚C
60
A
-10/+25
V
-55 to
+150
˚C
260
˚C
Pulse width tP limited by Tjmax
TC = 25˚C
Note
Note 1
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
V(BR)DSS
VGS(th)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Min.
Typ.
1200
1.7
V
2.2
IGSS
Gate-Source Leakage Current
RDS(on)
V
1.7
1
Zero Gate Voltage Drain Current
10
Note
VGS = 0 V, ID = 100 μA
VDS = 10V, ID = 10 mA
Fig. 7
VDS = 10V, ID = 1 mA
100
250
0.25
Drain-Source On-State Resistance
Test Conditions
VDS = 10V, ID = 1 mA
3.2
1.2
IDSS
Max. Unit
80
98
150
208
9.8
VDS = 1200 V, VGS = 0 V
μA
μA
mΩ
S
VDS = 1200 V, VGS = 0 V
TJ = 150ºC
VGS = 20 V, VDS = 0 V
VGS = 20 V, ID = 20 A
VGS = 20 V, ID = 20A, TJ = 150ºC
VDS= 20 V, IDS= 20 A
gfs
Transconductance
Ciss
Input Capacitance
Coss
Output Capacitance
80
Crss
Reverse Transfer Capacitance
6.5
Eoss
Coss Stored Energy
40
μJ
VAC = 25 mV
RG
Internal Gate Resistance
4.6
Ω
f = 1 MHz, VAC = 25 mV
8.5
950
VDS= 20 V, IDS= 20 A, TJ = 150ºC
Fig. 7
Fig. 6
VGS = 0 V
pF
VDS = 1000 V
Fig. 15
f = 1 MHz
Fig. 14
Built-in SiC Body Diode Characteristics
Symbol
Parameter
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Irrm
Typ.
Max.
3.3
Unit
V
3.1
40
ns
Reverse Recovery Charge
165
nC
Peak Reverse Recovery Current
6.4
A
Test Conditions
VGS = -5 V, IF=10 A, TJ = 25 ºC
VGS = -2 V, IF=10 A, TJ = 25 ºC
Note
Fig. 9
VGS = -5 V, IF=20 A, TJ = 25 ºC
VR = 800 V,
diF/dt= 350 A/μs
Gate Charge Characteristics
Symbol
Parameter
Typ.
Qgs
Gate to Source Charge
10.8
Qgd
Gate to Drain Charge
18.0
Qg
Gate Charge Total
49.2
Max.
Unit
nC
Test Conditions
Note
VDS = 800 V, VGS = 0/20 V
ID =20 A
Per JEDEC24 pg 27
Fig. 16
* NOTE 1: For inductive and resistive switching data and waveforms please refer to datasheet for packaged device. Part number C2M0080120D.
2
CPM2-1200-0080B Rev. -
Typical Performance
80
60
Tj = 25 °C
VGS = 18V
70
Tj = 150 °C
VGS = 16V
VGS = 20V
VGS = 18V
50
VGS = 16V
VGS = 14V
60
VGS = 10V
VGS = 14V
VGS = 12V
50
40
VGS = 10V
30
40
Drain Current, ID (A)
Drain Current, ID (A)
VGS = 20V
VGS = 12V
30
20
20
10
10
0
0
0
1
2
3
4
5
6
7
8
9
10
11
0
12
2
4
6
Figure 1. Typical Output Characteristics TJ = 25 ºC
10
12
14
16
18
20
Figure 2. Typical Output Characteristics TJ = 150 ºC
2.0
0.20
Parameters:
VGS = 20 V
VGS = 20 V
IDS = 20 A
1.8
8
Drain to Source Voltage, VDS (V)
Drain to Source Voltage, VDS (V)
150 °C
1.6
125 °C
0.16
On Resistance, RDS On (Ω)
Normalized On Resistance, RDS(on) (pu)
1.4
1.2
1.0
0.8
0.6
100 °C
75 °C
0.12
25 °C
0 °C
0.08
-55 °C
0.4
0.2
0.04
0.0
0
25
50
75
100
125
0
150
10
20
30
40
Drain-Source Current, IDS (A)
Junction Temperature, TJ (oC)
Figure 3. Normalized On-Resistance vs. Temperature
Figure 4. On-Resistance vs. Drain Current
40
0.30
Parameters:
IDS = 20 A
0.25
30
0.20
Drain Current, ID (A)
On Resistance, RDS On (Ω)
-55 °C
150 °C
0.15
0.10
25 °C
150 °C
20
25 °C
10
0.05
0.00
10
12
14
16
18
Gate-Source Voltage, VGS (V)
Figure 5. On-Resistance vs. Gate Voltage
3
CPM2-1200-0080B Rev. -
20
0
0
2
4
6
8
10
12
Gate to Source Voltage, VGS (V)
Figure 6. Typical Transfer Characteristics
14
Typical Performance
3.5
-5
Conditions:
VDS = 10 V
IDS = 1 mA
3.0
-4
-3
-2
-1
0
0
Condition:
TJ = -55 °C
VGS = -5 V
-5
Drain-Source Current, IDS (A)
Threshold Voltage, Vth (V)
2.5
Typical
2.0
1.5
Minimum
1.0
VGS = 0 V
VGS = -2 V
-10
-15
0.5
0.0
-50
-25
0
25
50
75
100
125
150
-20
Junction Temperature, TJ (°C)
Drain-Source Voltage, VDS (A)
Figure 7. Typical and Minimum Threshold Voltage vs.
Temperature
-5
-4
-3
-2
-1
Figure 8. Typical Body Diode Characteristics
TJ = -55 ºC
0
-5
-4
-3
-2
-1
0
0
0
Condition:
TJ = 25 °C
VGS = -5 V
VGS = 0 V
VGS = -2 V
VGS = -5 V
-5
-5
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
Condition:
TJ = 150 °C
VGS = 0 V
VGS = -2 V
-10
-15
-10
-15
-20
-20
Drain-Source Voltage, VDS (A)
Drain-Source Voltage, VDS (A)
Figure 9. Typical Body Diode Characteristics
TJ = 25 ºC
-5
-4
-3
-2
-1
Figure 10. Typical Body Diode Characteristics
TJ = 150 ºC
0
-5
-4
-3
-2
-1
0
Conditions:
TJ = 25 °C
-10
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
-10
-20
VGS = 0 V
VGS = 5 V
VGS = 10 V
VGS = 15 V
VGS = 20 V
-30
-40
Drain-Source Voltage, VDS (V)
-50
Figure 11. Typical 3rd Quadrant Characteristics
TJ = -55 ºC
4
0
0
Conditions:
TJ = -55 °C
CPM2-1200-0080B Rev. -
VGS = 0 V
VGS = 5 V
-20
VGS = 10 V
VGS = 15 V
VGS = 20 V
-40
Drain-Source Voltage, VDS (V)
-30
-50
Figure 12. Typical 3rd Quadrant Characteristics
TJ = 25 ºC
Typical Performance
-5
-4
-3
-2
-1
60
0
0
Conditions:
TJ = 150 °C
VGS = 0 V
VGS = 5 V
50
-20
-30
Stored Energy, EOSS (µJ)
Drain-Source Current, IDS (A)
-10
VGS = 10 V
VGS = 15 V
VGS = 20 V
40
30
20
10
-40
0
0
-50
Drain-Source Voltage, VDS (V)
200
400
600
800
1000
Figure 13. Typical 3rd Quadrant Characteristics
Characteristic TJ = 150 ºC
Figure 14. Typical transfer Characteristics
10000
10000
Conditions
VGS = 0 V
ftest = 1 MHz
Conditions:
VGS = 0 V
ftest = 1 MHz
CISS
CISS
1000
Capacitance (pF)
1000
Capacitance (pF)
1200
Drain-Source Voltage, VDS (V)
COSS
100
COSS
100
CRSS
10
10
1
0
50
100
150
200
Drain-Source Voltage, VDS (V)
CRSS
1
0
200
400
600
Drain-Source Voltage, VDS (V)
Figure 15A and 15B. Typical Capacitances vs. Drain Voltage at VGS = 0 V and f = 1 MHz
20
Conditions:
VDS = 800 V
IDS = 20 A
IGS = 10 mA
TJ = 25 C
Gate-Source Voltage, VGS (V)
16
12
8
4
0
0
10
20
30
40
Gate-Source Charge, QGS (nC)
Figure 16. Typical Gate Characteristic 25 ºC
5
CPM2-1200-0080B Rev. -
50
800
1000
Mechanical Parameters
Parameter
Typical Value
Unit
Die Dimensions (L x W)
3.10 × 3.36
mm
Exposed Source Pad Metal Dimensions (LxW) Each
1.04 × 1.43
mm
Gate Pad Dimensions (L x W)
0.80 × 0.50
mm
180 ± 40
µm
Top Side Source metallization (Al)
4
µm
Top Side Gate metallization (Al)
4
µm
0.8 / 0.6
µm
Die Thickness
Bottom Drain metallization (Ni/Ag)
Chip Dimensions
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems.
Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks and Z-REC and Z-FET are trademarks of Cree, Inc.
6
CPM2-1200-0080B Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power