VDS 1200 V ID @ 25˚C 31.6 A CPM2-1200-0080B Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS(on) 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant Benefits • • • Higher System Efficiency Reduced Cooling Requirements Increased System Switching Frequency Applications • • • • • Solar Inverters High Voltage DC/DC Converters Motor Drives Switch Mode Power Supplies UPS Part Number Package CPM2-1200-0080B Die Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol IDS (DC) Parameter Continuous Drain Current IDS (pulse) Pulsed Drain Current VGS Gate Source Voltage TJ , Tstg TL Operating Junction and Storage Temperature Solder Temperature Note 1: Assumes a RθJC < 0.60 K/W f 1 CPM2-1200-0080B Rev. - Value 31.6 20 Unit A Test Conditions VGS@20 V, TC = 25˚C VGS@20 V, TC = 100˚C 60 A -10/+25 V -55 to +150 ˚C 260 ˚C Pulse width tP limited by Tjmax TC = 25˚C Note Note 1 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol V(BR)DSS VGS(th) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Min. Typ. 1200 1.7 V 2.2 IGSS Gate-Source Leakage Current RDS(on) V 1.7 1 Zero Gate Voltage Drain Current 10 Note VGS = 0 V, ID = 100 μA VDS = 10V, ID = 10 mA Fig. 7 VDS = 10V, ID = 1 mA 100 250 0.25 Drain-Source On-State Resistance Test Conditions VDS = 10V, ID = 1 mA 3.2 1.2 IDSS Max. Unit 80 98 150 208 9.8 VDS = 1200 V, VGS = 0 V μA μA mΩ S VDS = 1200 V, VGS = 0 V TJ = 150ºC VGS = 20 V, VDS = 0 V VGS = 20 V, ID = 20 A VGS = 20 V, ID = 20A, TJ = 150ºC VDS= 20 V, IDS= 20 A gfs Transconductance Ciss Input Capacitance Coss Output Capacitance 80 Crss Reverse Transfer Capacitance 6.5 Eoss Coss Stored Energy 40 μJ VAC = 25 mV RG Internal Gate Resistance 4.6 Ω f = 1 MHz, VAC = 25 mV 8.5 950 VDS= 20 V, IDS= 20 A, TJ = 150ºC Fig. 7 Fig. 6 VGS = 0 V pF VDS = 1000 V Fig. 15 f = 1 MHz Fig. 14 Built-in SiC Body Diode Characteristics Symbol Parameter VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Irrm Typ. Max. 3.3 Unit V 3.1 40 ns Reverse Recovery Charge 165 nC Peak Reverse Recovery Current 6.4 A Test Conditions VGS = -5 V, IF=10 A, TJ = 25 ºC VGS = -2 V, IF=10 A, TJ = 25 ºC Note Fig. 9 VGS = -5 V, IF=20 A, TJ = 25 ºC VR = 800 V, diF/dt= 350 A/μs Gate Charge Characteristics Symbol Parameter Typ. Qgs Gate to Source Charge 10.8 Qgd Gate to Drain Charge 18.0 Qg Gate Charge Total 49.2 Max. Unit nC Test Conditions Note VDS = 800 V, VGS = 0/20 V ID =20 A Per JEDEC24 pg 27 Fig. 16 * NOTE 1: For inductive and resistive switching data and waveforms please refer to datasheet for packaged device. Part number C2M0080120D. 2 CPM2-1200-0080B Rev. - Typical Performance 80 60 Tj = 25 °C VGS = 18V 70 Tj = 150 °C VGS = 16V VGS = 20V VGS = 18V 50 VGS = 16V VGS = 14V 60 VGS = 10V VGS = 14V VGS = 12V 50 40 VGS = 10V 30 40 Drain Current, ID (A) Drain Current, ID (A) VGS = 20V VGS = 12V 30 20 20 10 10 0 0 0 1 2 3 4 5 6 7 8 9 10 11 0 12 2 4 6 Figure 1. Typical Output Characteristics TJ = 25 ºC 10 12 14 16 18 20 Figure 2. Typical Output Characteristics TJ = 150 ºC 2.0 0.20 Parameters: VGS = 20 V VGS = 20 V IDS = 20 A 1.8 8 Drain to Source Voltage, VDS (V) Drain to Source Voltage, VDS (V) 150 °C 1.6 125 °C 0.16 On Resistance, RDS On (Ω) Normalized On Resistance, RDS(on) (pu) 1.4 1.2 1.0 0.8 0.6 100 °C 75 °C 0.12 25 °C 0 °C 0.08 -55 °C 0.4 0.2 0.04 0.0 0 25 50 75 100 125 0 150 10 20 30 40 Drain-Source Current, IDS (A) Junction Temperature, TJ (oC) Figure 3. Normalized On-Resistance vs. Temperature Figure 4. On-Resistance vs. Drain Current 40 0.30 Parameters: IDS = 20 A 0.25 30 0.20 Drain Current, ID (A) On Resistance, RDS On (Ω) -55 °C 150 °C 0.15 0.10 25 °C 150 °C 20 25 °C 10 0.05 0.00 10 12 14 16 18 Gate-Source Voltage, VGS (V) Figure 5. On-Resistance vs. Gate Voltage 3 CPM2-1200-0080B Rev. - 20 0 0 2 4 6 8 10 12 Gate to Source Voltage, VGS (V) Figure 6. Typical Transfer Characteristics 14 Typical Performance 3.5 -5 Conditions: VDS = 10 V IDS = 1 mA 3.0 -4 -3 -2 -1 0 0 Condition: TJ = -55 °C VGS = -5 V -5 Drain-Source Current, IDS (A) Threshold Voltage, Vth (V) 2.5 Typical 2.0 1.5 Minimum 1.0 VGS = 0 V VGS = -2 V -10 -15 0.5 0.0 -50 -25 0 25 50 75 100 125 150 -20 Junction Temperature, TJ (°C) Drain-Source Voltage, VDS (A) Figure 7. Typical and Minimum Threshold Voltage vs. Temperature -5 -4 -3 -2 -1 Figure 8. Typical Body Diode Characteristics TJ = -55 ºC 0 -5 -4 -3 -2 -1 0 0 0 Condition: TJ = 25 °C VGS = -5 V VGS = 0 V VGS = -2 V VGS = -5 V -5 -5 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) Condition: TJ = 150 °C VGS = 0 V VGS = -2 V -10 -15 -10 -15 -20 -20 Drain-Source Voltage, VDS (A) Drain-Source Voltage, VDS (A) Figure 9. Typical Body Diode Characteristics TJ = 25 ºC -5 -4 -3 -2 -1 Figure 10. Typical Body Diode Characteristics TJ = 150 ºC 0 -5 -4 -3 -2 -1 0 Conditions: TJ = 25 °C -10 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) -10 -20 VGS = 0 V VGS = 5 V VGS = 10 V VGS = 15 V VGS = 20 V -30 -40 Drain-Source Voltage, VDS (V) -50 Figure 11. Typical 3rd Quadrant Characteristics TJ = -55 ºC 4 0 0 Conditions: TJ = -55 °C CPM2-1200-0080B Rev. - VGS = 0 V VGS = 5 V -20 VGS = 10 V VGS = 15 V VGS = 20 V -40 Drain-Source Voltage, VDS (V) -30 -50 Figure 12. Typical 3rd Quadrant Characteristics TJ = 25 ºC Typical Performance -5 -4 -3 -2 -1 60 0 0 Conditions: TJ = 150 °C VGS = 0 V VGS = 5 V 50 -20 -30 Stored Energy, EOSS (µJ) Drain-Source Current, IDS (A) -10 VGS = 10 V VGS = 15 V VGS = 20 V 40 30 20 10 -40 0 0 -50 Drain-Source Voltage, VDS (V) 200 400 600 800 1000 Figure 13. Typical 3rd Quadrant Characteristics Characteristic TJ = 150 ºC Figure 14. Typical transfer Characteristics 10000 10000 Conditions VGS = 0 V ftest = 1 MHz Conditions: VGS = 0 V ftest = 1 MHz CISS CISS 1000 Capacitance (pF) 1000 Capacitance (pF) 1200 Drain-Source Voltage, VDS (V) COSS 100 COSS 100 CRSS 10 10 1 0 50 100 150 200 Drain-Source Voltage, VDS (V) CRSS 1 0 200 400 600 Drain-Source Voltage, VDS (V) Figure 15A and 15B. Typical Capacitances vs. Drain Voltage at VGS = 0 V and f = 1 MHz 20 Conditions: VDS = 800 V IDS = 20 A IGS = 10 mA TJ = 25 C Gate-Source Voltage, VGS (V) 16 12 8 4 0 0 10 20 30 40 Gate-Source Charge, QGS (nC) Figure 16. Typical Gate Characteristic 25 ºC 5 CPM2-1200-0080B Rev. - 50 800 1000 Mechanical Parameters Parameter Typical Value Unit Die Dimensions (L x W) 3.10 × 3.36 mm Exposed Source Pad Metal Dimensions (LxW) Each 1.04 × 1.43 mm Gate Pad Dimensions (L x W) 0.80 × 0.50 mm 180 ± 40 µm Top Side Source metallization (Al) 4 µm Top Side Gate metallization (Al) 4 µm 0.8 / 0.6 µm Die Thickness Bottom Drain metallization (Ni/Ag) Chip Dimensions This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks and Z-REC and Z-FET are trademarks of Cree, Inc. 6 CPM2-1200-0080B Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power