Transistors IC SMD Type Product specification 2SB1527 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Contains a diode between collector and emitter. 1 0.55 Low saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Contains a bias resistor between base and emitter. +0.05 0.1-0.01 +0.1 0.97-0.1 Large current capacity. 0-0.1 small-sized hybrid ICs. +0.1 0.38-0.1 Compact package making it easy to realize highdensity, 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -15 V Emitter-base voltage VEBO -5 V Collector current IC -0.8 A Collector current (pulse) ICP -2 A Collector dissipation PC 200 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit -1 ìA Collector cutoff current ICBO VCB = -15V , IE = 0 DC current Gain hFE VCE = -2V , IC = -0.5A fT VCE = -2V , IC = -0.5A 250 MHz Cob VCB = -10V , f = 1MHz 30 pF Gain bandwidth product Output capacitance 70 Collector-emitter saturation voltage VCE(sat) IC = -500mA , IB = -10mA -0.2 -0.4 V Base-emitter saturation voltage VBE(sat) IC = -500mA , IB = -10mA -.095 -1.3 V Collector-to-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -20 Collector-to-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -15 Diode forward voltage VF Base-emitter resistance RBE V V IF=-0.5A -1.5 1 V KÙ Marking Marking NS http://www.twtysemi.com [email protected] 4008-318-123 1 of 1