TYSEMI 2SB1115

Product specification
2SB1115
Features
World standard miniature package.
Low VCE(sat): VCE(sat)=-0.2V at 1A
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
-60
V
Collector to emitter voltage
VCEO
-50
V
Emitter to base voltage
VEBO
-6
V
IC
-1
A
Collector current (pulse) *
IC
-2
A
Total power dissipation
PT
2
W
Junction temperature
Tj
150
Tstg
-55 to +150
Collector current
Storage temperature range
* Pulsed: PW
10 ms, duty cycle
50%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = -60 V, IE = 0
-100
nA
Emitter cutoff current
IEBO
VEB = -6.0 V, IC = 0
-100
nA
DC current gain *
hFE
VCE = -2.0 V, IC = -100 mA
135
VCE = -2.0 V, IC = -1.0A
100
340
600
200
Collector saturation voltage *
VCE(sat) IC = -1.0A, IB = -50 mA
-0.2
-0.3
V
Base saturation voltage *
VBE(sat) IC = -1.0A, IB = -50 mA
-0.9
-1.2
V
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW
VBE
VCE = -2.0 V, IC = -50 mA
-600
fT
VCE = -2.0 V, IE = -100 mA
80
Cob
350 ìs, duty cycle
VCB = -10 V, IE = 0 , f = 1.0 MHz
-700
V
120
MHz
25
pF
2%
hFE Classification
Marking
YM
YL
YK
hFE
135 270
200 400
300 600
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 1