KEXIN 2SK3723

Transistors
IC
SMD Type
N-channel Enhancement Mode MOSFET
2SK3723
1 .2 7 -0+ 0.1.1
TO-263
Features
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
0.1max
+0.1
1.27-0.1
5 .2 8 -0+ 0.2.2
For high-speed switching
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
+0.1
5.08-0.1
1 5 .2 5 -0+ 0.2.2
High avalanche resistance
2 .5 4 -0+ 0.2.2
8 .7 -0+ 0.2.2
5 .6 0
Low on-resistance, low Qg
+0.2
0.4-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
VDSS
150
V
Gate-source surrender voltage
VGSS
30
V
Drain current
ID
30
A
Peak drain current
IDP
120
A
Power dissipation
PD
50
W
3
Power dissipation Ta = 25
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
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1
Transistors
IC
SMD Type
2SK3723
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-source surrender voltage
VDSS
Gate threshold voltage
Vth
VDS = 25 V, ID = 1 mA
Drain-source cutoff current
IDSS
VDS = 120 V, VGS = 0
Gate-source cutoff current
IGSS
VGS =
Drain-source ON resistance
Min
Yfs
Short-circuit forward transfer capacitance
Ciss
Short-circuit output capacitance
Coss
Typ
2
4
VDS = 25 V, VGS = 0, f = 1 MHz
33
8
Unit
V
30 V, VDS = 0
VDS = 25 V, ID = 15 A
Max
150
RDS(on) VGS = 10 V, ID = 15 A
Forward transfer admittance
V
100
ìA
1
ìA
42
mÙ
18
S
2 900
pF
618
pF
Reverse transfer capacitance
Crss
91
pF
Turn-on delay time
td(on)
32
ns
Rise time
Tr
Turn-off delay time
td(off)
Fall time
VDD
100 V, ID = 15 A,RL = 6.7 Ù,
VGS = 10 V
tf
Diode foward voltage
VDSF
46
ns
227
ns
66
ns
IDR = 30 A, VGS = 0
-1.5
V
Reverse recovery time
trr
L = 230 ìH, VDD = 100 V
130
ns
Reverse recovery charge
Qrr
IDR = 15 A, di/dt = 100 A/ìs
533
nC
55.4
nC
9.1
nC
22.4
nC
Gate charge load
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
VDD = 100 V, ID = 15 A,VGS = 10 V
Thermal resistance (ch-c)
Rth(ch-c)
2.5
/W
Thermal resistance (ch-a)
Rth(ch-a)
89.2
/W
Marking
Marking
2
Testconditons
ID = 1 mA, VGS = 0
K3723
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