Transistors IC SMD Type General Purpose Transistor BCW61A/B/C/D Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 PNP Epitaxial Silicon Transistor 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 unless otherwise noted Parameter Symbol Rating Unit Collector-Base Voltage VCBO -32 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V IC -100 mA PC 350 mW TSTG -55 to +150 Collector Current Collector Power Dissipation Storage Temperature www.kexin.com.cn 1 Transistors IC SMD Type BCW61A/B/C/D Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current Emitter cutoff current Testconditons BCW61C DC current gain Unit -20 nA IE = 0; VCB = -32 V ICBO IE = 0; VCB = -32 V; Tamb = 150 -20 ìA IEBO IC = 0; VEB = -4 V -20 nA 30 hFE IC = -10ìA; VCE = -5 V 40 100 BCW61B 180 310 250 460 380 630 hFE IC = -2 mA; VCE = -5 V BCW61D BCW61B BCW61C 80 hFE IC = -50 mA; VCE = -5 V BCW61D VBE(sat) Base to emitter saturation voltage 100 110 VCE(sat) Collector-emitter saturation voltage IC = -10 mA; IB = -0.25 mA -60 -250 mV IC = -50 mA; IB = -1.25 mA -120 -550 mV IC = -10 mA; IB = -0.25 mA -600 -850 mV IC = -50 mA; IB = -1.25 mA -0.68 -1.05 V -600 -750 mV Base to emitter voltage VBE IC = -2 mA; VCE = -5 V Collector capacitance CC IE = ie = 0; VCB = -10 V; f = 1 MHz 4.5 pF Emitter capacitance Ce IC = ic = 0; VEB = -0.5 V; f = 1 MHz 11 pF Transition frequency * fT IC = -10 mA; VCE = -5 V; f = 100 MHz NF IC = -200 ìA; VCE = -5 V; RS = 2 kÙ; f = 1 kHz; B = 200 Hz Noise figure * Pulse test: tp 300 ìs; d 0.02. Marking 2 Max BCW61D BCW61C DC current gain Typ ICBO BCW61B DC current gain Min TYPE BCW61A BCW61B BCW61C BCW61D Marking BA BB BC BD www.kexin.com.cn -650 100 MHz 2 6 dB