RoHS 2SC2230 2SC2230 D T TO-92MOD TRANSISTOR (NPN) 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.8 W (Tamb=25℃) 3. BASE Collector current 0.1 A ICM: Collector-base voltage V(BR)CBO: 200 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage IC N O unless otherwise specified) R T C E L Collector-base breakdown voltage C 123 ,. L O Test conditions MIN MAX UNIT Ic= 100µA , IE=0 200 V IC= 10 mA , IB=0 160 V V(BR)EBO IE= 10µA, IC=0 5 V Collector cut-off current ICBO VCB=200V, IE=0 0.1 µA Collector cut-off current ICER VCB=160 V , REB= 10MΩ 10 µA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 µA hFE VCE=10 V, IC= 10mA VCE(sat) IC= 50m A, IB= 5mA 0.5 V Base-emitter voltage VBE IC= 1 mA, VCE= 10V 0.7 V Transition frequency fT VCE= 10 V, IC= 10mA DC current gain J E E Collector-emitter saturation voltage W 120 400 50 MHz CLASSIFICATION OF hFE Rank Range WEJ ELECTRONIC CO. Y GR 120-240 200-400 Http:// www.wej.cn E-mail:[email protected]