RoHS 2SD1616 2SD1616 TRANSISTOR (NPN) D T ,. L TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range 3. BSAE ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Collector cut-off current C IC TJ, Tstg: -55℃ to +150℃ N O 1 2 3 unless otherwise specified) Test R T conditions O MIN MAX UNIT Ic= 10µA , IE=0 60 V IC= 2 mA , IB=0 50 V IE= 10µA, IC=0 6 V ICBO VCB= 60V, IE=0 0.1 µA IEBO VEB=6 V, IC=0 0.1 µA hFE1 VCE=2 V, IC= 100mA 135 hFE2 VCE=2 V, IC= 1A 81 Collector-emitter saturation voltage * VCE(sat) IC= 1A, IB=50mA 0.3 V Base-emitter saturation voltage * VBE(sat) IC= 1A, IB=50mA 1.2 V VBE VCE= 2V, IC=50mA 0.7 V fT VCE=2 V, IC= 100mA Cob VCE=10V,IE= 0, f=1MHz C E L Emitter cut-off current DC current gain J E E Base-emitter voltage * Transition frequency Output capacitance W Turn on time ton Storage time tS Fall time tF Vcc=10V,IC=100mA,IB1=-IB2= 10Ma Vbe(off)=-2~ -3V 600 100 MHz 25 pF 0.07 typ ms 0.95 typ ms 0.07 typ ms *pulse test: PW≤350µS, δ≤2%. CLASSIFICATION OF hFE1 Rank Range Y G L 135-270 200-400 300-600 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]