ETC BYW100

```BYW100-200
®
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE
MAIN PRODUCT CHARACTERISTICS
IF(AV)
1.5 A
VRRM
200 V
Tj (max)
150 °C
VF (max)
0.85 V
FEATURES AND BENEFITS
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery times
The specifications and curves enable the
determination of trr and IRM at 100°C under
users conditions.
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DO-15
BYW100-200
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DESCRIPTION
Low voltage drop and rectifier suited for switching
mode base drive and transistor circuits.
ABSOLUTE RATINGS (limiting values)
Symbol
VRRM
Parameter
Value
200
Unit
V
Repetitive peak reverse voltage
IFRM
Repetitive peak forward current *
tp = 5µs F = 1KHz
80
A
IF(AV)
Average forward current*
Ta = 95°C δ = 0.5
1.5
A
IFSM
Surge non repetitive forward current
tp=10 ms Sinusoidal
50
A
Tstg
Storage temperature range
-65 +150
°C
+ 150
°C
230
°C
Tj
Maximum operating junction temperature
TL
Maximum lead temperature for soldering during 10s at 4mm from
case
* On infinitive heatsink with 10mm lead length
October 2001 - Ed: 4B
1/5
BYW100-200
THERMAL RESISTANCES
Symbol
Rth (j-a)
Parameter
Junction to ambient*
Value
Unit
45
°C/W
* On infinite heatsink with 10mm lead length.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Tests conditions
IR *
Reverse leakage current
Tj = 25°C
Min.
Typ.
VR = VRRM
Tj = 100°C
VF **
Forward voltage drop
Tj = 25°C
IF = 4.5A
Tj = 100°C
IF = 1.5A
0.78
Max.
Unit
10
µA
0.5
mA
1.2
V
0.85
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2 %
To evaluate the maximum conduction losses use the following equation :
P = 0.75 x IF(AV) + 0.075 x IF2(RMS)
RECOVERY CHARACTERISTICS
Symbol
2/5
Tests conditions
Min.
Typ.
Max.
Unit
35
ns
trr
IF = 1A dIF/dt = - 50A/µs VR = 30V
Tj = 25°C
tfr
IF = 1.5A dIF/dt = - 50A/µs
Measured at 1.1 x VFmax
Tj = 25°C
30
ns
VFP
IF = 1.5A dIF/dt = - 50A/µs
Tj = 25°C
5
V
Qrr
IF = 1.5A dIF/dt = - 20A/µs VR ≤ 30V
Tj = 25°C
10
nC
BYW100-200
Fig. 1: Average forward power dissipation versus
average forward current.
PF(av)(W)
1.6
δ = 0.05
δ = 0.1
δ = 0.2
δ=1
δ = 0.5
1.4
1.2
1.0
0.8
0.6
T
0.4
0.2
0.0
0.0
δ=tp/T
IF(av) (A)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
tp
1.6
1.8
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IF(av)(A)
Rth(j-a)=Rth(j-l)
Rth(j-a)=100°C/W
Tamb(°C)
0
50
75
100
125
150
Fig. 4: Variation of thermal impedance junction to
ambient versus pulse duration (recommended pad
layout, epoxy FR4, e(Cu) = 35µm).
Fig. 3: Thermal resistance versus lead length.
Rth(°C/W)
110
100
90
80
70
60
50
40
30
20
10
0
25
Zth(j-a)/Rth(j-a)
1.00
Rth(j-a)
δ = 0.5
δ = 0.2
Rth(j-l)
0.10
δ = 0.1
Single pulse
5
10
15
20
25
Fig. 5: Forward voltage drop versus forward
current (maximum values).
50.00
0.01
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2
5E+2
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
IFM(A)
20
C(pF)
F=1MHz
Tj=25°C
Tj=100°C
(Typical values)
10
10.00
Tj=25°C
5
Tj=100°C
1.00
2
VFM(V)
0.10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
VR(V)
1
1
10
100
200
3/5
BYW100-200
Fig. 7: Reverse recovery time versus dIF/dt.
150
Fig. 8: Peak reverse recovery current versus
dIF/dt.
trr(ns)
2.5
IF=1.5A
VR=30V
90% confidence
Tj=100°C
IRM(A)
IF=1.5A
VR=30V
90% confidence
2.0
100
1.5
Tj=100°C
Tj=25°C
1.0
50
Tj=25°C
0.5
0
dIF/dt(A/µs)
1
10
100
Fig. 9: Dynamic parameters versus junction
temperature.
250
%
Qrr
200
IRM
150
100
25
4/5
trr
50
75
Tj(°C)
100
125
0.0
dIF/dt(A/µs)
1
10
100
BYW100-200
PACKAGE MECHANICAL DATA
DO-15
DIMENSIONS
C
D
■
■
REF.
C
A
B
Millimeters
Inches
Min.
Max.
Min.
Max.
A
6.05
6.75
0.238
0.266
B
2.95
3.53
0.116
0.139
C
26
31
1.024
1.220
D
0.71
0.88
0.028
0.035
Ordering code
Marking
Package
Weight
Base qty
Delivery mode
BYW100-200
BYW100-200
DO-15
0.4 g
1000
Ammopack
BYW100-200RL
BYW100-200
DO-15
0.4 g
6000
Tape and reel
White band indicates cathode
Epoxy meets UL 94,V0
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