SS12, SS14 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system. • • • • http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20, 40 VOLTS Small Compact Surface Mountable Package with J−Bent Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Stress Protection Mechanical Characteristics: • Case: Epoxy, Molded, Epoxy Meets UL94, VO • Weight: 70 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped in 12 mm tape, 5000 units per 13 inch reel Polarity: Cathode Lead Indicated by Either Notch in Plastic Body or Polarity Band Marking: SS12, SS14 Device Meets MSL 1 Requirements ESD Ratings: Human Body Model, 3B (> 8000 V) Machine Model, B (> 200 V) SMA CASE 403D PLASTIC MARKING DIAGRAM SS1x SS1 x = Device Code = 2 or 4 ORDERING INFORMATION Package Shipping† SS12T3 SMA 5000/Tape & Reel SS14T3 SMA 5000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2003 October, 2003 − Rev. 1 1 Publication Order Number: SS12/D SS12, SS14 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol SS12 SS14 Average Rectified Forward Current (At Rated VR, TC = 120°C) Value VRRM VRWM VR Unit V 20 40 IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 120°C) IFRM 2.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 60 A Tstg, TC −55 to +150 °C TJ −55 to +125 °C dv/dt 10,000 V/s Symbol Value Unit RJL RJA 35 86 °C/W VF TJ = 25°C V Storage/Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) THERMAL CHARACTERISTICS Characteristic Thermal Resistance − Junction−to−Lead (Note 1) Thermal Resistance − Junction−to−Ambient (Note 1) ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2) see Figure 2 for other Values Maximum Instantaneous Reverse Current see Figure 4 for other Values 0.47 (IF = 1.0 A) IR (VR = 20 V) (VR = 40 V) 1. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4. 2. Pulse Test: Pulse Width ≤ 250 s, Duty Cycle ≤ 2.0%. http://onsemi.com 2 TJ = 25°C TJ = 100°C 0.045 0.1 2.0 5.0 mA SS12, SS14 IF, INSTANTANEOUS FORWARD CURRENT (A) 10 TJ = 100°C 1 TJ = 25°C TJ = 150°C TJ = −55°C 0.1 0.10 0.30 0.50 0.70 1 TJ = 25°C TJ = 150°C TJ = −55°C 0.1 0.10 0.50 0.70 VF, MAXIMUM FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 0.90 100E−3 10E−3 TJ = 150°C 1E−3 TJ = 100°C TJ = 150°C 10E−3 TJ = 100°C 1E−3 100E−6 100E−6 10E−6 TJ = 25°C 1E−6 0 10 20 30 VR, INSTANTANEOUS FORWARD VOLTAGE (V) 40 TJ = 25°C 10E−6 1E−6 0 Figure 3. Typical Reverse Current 10 20 30 VR, REVERSE VOLTAGE (V) 40 Figure 4. Maximum Reverse Current 1.8 0.25 freq = 20 kHz dc 1.6 PFO, AVERAGE POWER DISSIPATION (W) IO, AVERAGE FORWARD CURRENT (A) 0.30 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 100E−3 IR, REVERSE CURRENT (A) TJ = 100°C 0.90 IR, MAXIMUM REVERSE CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 10 1.4 1.2 Square Wave 1 Ipk/IO = 5 0.6 Ipk/IO = 10 0.4 Ipk/IO = 20 0.2 Ipk/IO = 5 Ipk/IO = p Ipk/IO = 20 0.15 Ipk/IO = p 0.8 Ipk/IO = 10 0.1 Square Wave dc 0.05 0.2 0 0 25 45 65 85 105 125 145 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 1.8 SS12, SS14 1000 1000 r(t), TRANSIENT THERMAL RESISTANCE C, CAPACITANCE (pF) TJ = 100°C D = 0.10 D = 0.50 D = 0.20 100 100 P(pk) 10 D = 0.05 1 Single Pulse 10 0 5 10 15 20 25 30 35 40 0.1 0.00001 0.0001 0.001 0.01 45 t1 D = 0.01 Test Type > Min Pad Theta JC = min pad 1 oz C/W 0.1 1.0 10 VR, REVERSE VOLTAGE (V) t, TIME (sec) Figure 7. Capacitance Figure 8. Thermal Response http://onsemi.com 4 t2 Duty Cycle, D = t1/t2 100 1000 SS12, SS14 PACKAGE DIMENSIONS SMA CASE 403D−02 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02. S A D DIM A B C D H J K S B POLARITY INDICATOR OPTIONAL AS NEEDED INCHES MIN MAX 0.160 0.180 0.090 0.115 0.075 0.095 0.050 0.064 0.002 0.006 0.006 0.016 0.030 0.060 0.190 0.220 C K J H 0.157 4.0 0.0787 2.0 0.0787 2.0 SMA FOOTPRINT http://onsemi.com 5 inches mm MILLIMETERS MIN MAX 4.06 4.57 2.29 2.92 1.91 2.41 1.27 1.63 0.05 0.15 0.15 0.41 0.76 1.52 4.83 5.59 SS12, SS14 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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