ETC 2SB1319R

Transistor
2SB1319
Silicon PNP epitaxial planer type
For low-frequency power amplification
Unit: mm
6.9±0.1
1.0
0.85
*
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–30
V
Collector to emitter voltage
VCEO
–20
V
Emitter to base voltage
VEBO
–7
V
Peak collector current
ICP
–8
A
Collector current
IC
–5
A
Collector power dissipation
PC*
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
1cm2
Printed circuit board: Copper foil area of
thickness of 1.7mm for the collector portion
■ Electrical Characteristics
4.5±0.1
0.55±0.1
(Ta=25˚C)
3
0.45±0.05
2
2.5
1:Base
2:Collector
3:Emitter
1
1.25±0.05
■ Absolute Maximum Ratings
4.1±0.2
7
0.
●
Low collector to emitter saturation voltage VCE(sat).
Large collector current IC.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.0
R
●
1.0±0.1
●
0.4
■ Features
2.5±0.1
1.5 R0.9
R0.9
2.4±0.2 2.0±0.2 3.5±0.1
1.5
2.5
EIAJ:SC–71
M Type Mold Package
or more, and the board
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
ICBO
VCB = –10V, IE = 0
–100
nA
Emitter cutoff current
IEBO
VEB = –5V, IC = 0
–1
µA
Collector to emitter voltage
VCEO
IC = –1mA, IB = 0
–20
V
Emitter to base voltage
VEBO
IE = –10µA, IC = 0
–7
V
*1
VCE = –2V, IC =
–2A*2
Forward current transfer ratio
hFE
Collector to emitter saturation voltage
VCE(sat)
IC = –3A, IB = –0.1A*2
Transition frequency
fT
VCB = –6V, IE = 50mA, f = 200MHz
Collector output capacitance
Cob
VCB = –20V, IE = 0, f = 1MHz
90
625
–1
120
MHz
85
*2
*1h
FE
V
pF
Pulse measurement
Rank classification
Rank
P
Q
R
hFE
90 ~ 135
120 ~ 205
180 ~ 625
1
2SB1319
Transistor
PC — Ta
IC — VCE
1.2
1.0
0.8
0.6
0.4
–5
–45mA
–40mA
–35mA
–30mA
–4
–25mA
–20mA
–3
–15mA
–2
–10mA
–10
–5mA
–1
25˚C
–8
Ta=75˚C
–25˚C
–6
–4
–2
0
40
60
80 100 120 140 160
–2
–3
–4
–5
–6
0
– 0.4
–100
Collector to emitter saturation voltage VCE(sat) (V)
VCE=–2V
Ta=75˚C
500
25˚C
–25˚C
–1.6
–2.0
240
IC/IB=30
–10
–3
–1
Ta=75˚C
25˚C
–25˚C
– 0.1
100
–1.2
fT — I E
–30
– 0.3
200
– 0.8
Base to emitter voltage VBE (V)
VCE(sat) — IC
600
300
–1
Collector to emitter voltage VCE (V)
hFE — IC
400
0
0
VCB=–6V
Ta=25˚C
Transition frequency fT (MHz)
20
Ambient temperature Ta (˚C)
Forward current transfer ratio hFE
VCE=–2V
Ta=25˚C
IB=–50mA
0.2
0
200
160
120
80
40
– 0.03
0
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector current IC (A)
300
IE=0
f=1MHz
Ta=25˚C
250
200
150
100
50
0
–1
–3
–10
–30
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
0
–1
–3
Collector current IC (A)
Cob — VCB
Collector output capacitance Cob (pF)
–12
Collector current IC (A)
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
1.4
0
–100
Collector to base voltage VCB (V)
2
IC — VBE
–6
Collector current IC (A)
Collector power dissipation PC (W)
1.6
–10
1
3
10
30
100
300
Emitter current IE (mA)
1000
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2001 MAR