Transistor 2SB0873 (2SB873) Silicon PNP epitaxial planer type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 ■ Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 0.7±0.1 +0.3 ● 0.7–0.2 ● (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –7 V Peak collector current ICP –10 A +0.2 IC –5 A Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 0.45–0.1 1.27 1 Collector current +0.2 0.45–0.1 1.27 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package 3.2 ■ Absolute Maximum Ratings 13.5±0.5 2.54±0.15 (Ta=25˚C) Symbol Parameter Conditions min Collector cutoff current ICBO VCB = –10V, IE = 0 Emitter cutoff current IEBO VEB = –5V, IC = 0 Collector to emitter voltage VCEO IC = –1mA, IB = 0 –20 Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 Forward current transfer ratio hFE*1 VCE = –2V, IC = –2A*2 90 Collector to emitter saturation voltage VCE(sat) IC = –3A, IB = –0.1A*2 Transition frequency fT VCB = –6V, IE = 50mA, f = 200MHz Collector output capacitance Cob VCB = –20V, IE = 0, f = 1MHz typ FE Unit nA –100 nA V V 625 –1 120 V MHz 85 *2 *1h max –100 pF Pulse measurement Rank classification Rank P Q R hFE 90 ~ 135 120 ~ 205 180 ~ 625 Note.) The Part number in the Parenthesis shows conventional part number. 1 2SB0873 Transistor PC — Ta IC — VCE 1.2 IC — VBE –6 –12 VCE=–2V –5 0.8 0.6 0.4 0.2 –25mA –4 –20mA –15mA –3 –10mA –2 –5mA –25˚C –6 –4 –2 0 40 60 80 100 120 140 160 0 0 –2 –4 –12 –10 –3 –1 Ta=75˚C 25˚C –25˚C – 0.1 – 0.03 –1 –3 25˚C 400 –25˚C 300 200 100 Cob — VCB –3 –10 120 100 80 –10 –3 Single pulse Ta=25˚C ICP IC t=10ms t=1s –1 – 0.3 60 – 0.1 40 – 0.03 20 –10 –30 –100 Collector to base voltage VCB (V) – 0.01 – 0.1 – 0.3 –1 –3 200 160 120 80 40 –10 –30 1 3 10 30 Emitter current IE (mA) –30 Collector current IC (A) 140 –2.0 0 –1 Area of safe operation (ASO) –100 IE=0 f=1MHz Ta=25˚C –1.6 VCB=–6V Ta=25˚C Ta=75˚C Collector current IC (A) 160 –1.2 240 0 – 0.01 – 0.03 – 0.1 – 0.3 –10 200 – 0.8 fT — I E 500 Collector current IC (A) –3 – 0.4 Base to emitter voltage VBE (V) VCE=–2V Forward current transfer ratio hFE –30 0 –1 0 600 IC/IB=30 180 –10 hFE — IC –100 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –8 Collector to emitter voltage VCE (V) VCE(sat) — IC – 0.3 –6 Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) Ta=75˚C –8 –1mA 0 Collector output capacitance Cob (pF) 25˚C –10 –30mA –1 0 2 –35mA Collector current IC (A) 1.0 Collector current IC (A) Collector power dissipation PC (W) Ta=25˚C IB=–40mA –100 Collector to emitter voltage VCE (V) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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