Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Complementary to 2SD2457 Unit: mm 45° ■ Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 4.0–0.20 ● 2.6±0.1 ● 1.5±0.1 4.5±0.1 1.6±0.2 2.5±0.1 ■ Features 0.5±0.08 1.5±0.1 (Ta=25˚C) 0.4±0.04 3.0±0.15 Parameter Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –40 V Emitter to base voltage VEBO –5 V Peak collector current ICP –3 A Base current IB – 0.6 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 3 2 1 marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : 1X Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol ICBO Collector cutoff current max Unit VCB = –20V, IE = 0 Conditions min typ –1 µA ICEO VCE = –12V, IB = 0 –100 µA Emitter cutoff current IEBO VEB = –5V, IC = 0 –100 µA Collector to base voltage VCBO IC = –1mA, IE = 0 –50 V Collector to emitter voltage VCEO IC = –10mA, IB = 0 –40 V VCE = –5V, IC = –1A 50 * Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = –1.5A, IB = –0.15A Base to emitter saturation voltage VBE(sat) IC = –2A, IB = –0.2A Transition frequency fT VCB = –5V, IE = 0.5A, f = 200MHz 150 MHz Collector output capacitance Cob VCB = –5V, IE = 0, f = 1MHz 70 pF *h FE 220 – 0.4 –1 –1.5 V V Rank classification Rank P Q R hFE 50 ~ 100 80 ~ 160 100 ~ 220 1 Transistor 2SB1599 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.2 1.0 0.8 0.6 0.4 0.2 VCE(sat) — IC TC=25˚C IB=–40mA –3.5 –35mA Collector current IC (A) Collector power dissipation PC (W) IC — VCE –4.0 –3.0 –30mA –2.5 –25mA –2.0 –20mA –1.5 –15mA –10mA 20 40 60 –5mA 80 100 120 140 160 –1 Ta=100˚C 25˚C –25˚C – 0.03 0 Ambient temperature Ta (˚C) –3 – 0.1 –1.0 0 0 IC/IB=10 –10 – 0.3 – 0.5 0 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.4 –2 –4 –6 –8 –10 – 0.01 – 0.01 – 0.03 Collector to emitter voltage VCE (V) VBE(sat) — IC – 0.1 – 0.3 hFE — IC Ta=–25˚C 100˚C – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 30 10 3 Collector current IC (A) Cob — VCB –1 IE=0 f=1MHz Ta=25˚C 120 90 60 30 –3 –10 160 120 80 40 0 0.01 0.03 –3 –30 –100 0.1 0.3 1 3 10 Emitter current IE (A) VCER — RBE Collector to emitter voltage VCER (V) Collector output capacitance Cob (pF) – 0.3 ICEO — Ta –80 Collector to base voltage VCB (V) 2 – 0.1 200 Collector current IC (A) 150 0 –1 –25˚C 100 1 – 0.01 – 0.03 –3 25˚C Ta=25˚C 1000 VCE=–12V –70 300 –60 –50 2SA699A –40 –30 ICEO (Ta) ICEO (Ta=25˚C) 25˚C –1 TC=100˚C 300 Transition frequency fT (MHz) Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) –3 VCB=–5V f=50MHz Ta=25˚C VCE=–5V 1000 –3 fT — I E 240 IC/IB=10 –10 –1 Collector current IC (A) 100 30 10 2SA699 –20 3 –10 0 0.001 1 0.01 0.1 1 10 Base to emitter resistance RBE (kΩ) 0 20 40 60 80 100 120 Ambient temperature Ta (˚C) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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