2SC5730K Transistors Medium power transistor (30V, 1A) 2SC5730K zExternal dimensions (Unit : mm) (2) (3) 0.4 1.9 (SC-59) <SOT-346> 2.9 (1) SMT3 0.95 0.95 zFeatures 1) High speed switching. (Tf : Typ. : 50ns at IC = 1.0A) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 500mA, IB = 50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2048K 1.6 1.1 0.8 (1) Emitter (2) Base (3) Collector 0.15 2.8 0.3Min. Each lead has same dimensions Abbreviated symbol : UM zApplications Small signal low frequency amplifier High speed switching zStructure NPN Silicon epitaxial planar transistor zPackaging specifications Package Type Taping Code T146 Basic ordering unit (pieces) 3000 2SC5730K zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Parameter VEBO 6 V DC IC 1.0 A Pulsed ICP 2.0 A Power dissipation PC 200 mW Junction temperature Tj 150 °C Tstg −55 to 150 °C Emitter-base voltage Collector current Range of storage temperature ∗1 ∗2 ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land 1/3 2SC5730K Transistors zElectrical characteristics (Ta=25°C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol BVCEO BVCBO BVEBO ICBO IEBO Min. 30 30 6 − − Typ. − − − − − Max. − − − 1.0 1.0 Unit V V V µA µA Collector-emitter saturation voltage VCE (sat) − 150 300 mV hFE 120 − 390 − fT − 280 − MHz Corrector output capacitance Cob − 7 − pF Turn-on time Storage time Fall time Ton Tstg Tf − − − 40 150 50 − − − ns ns ns DC current gain Transition frequency Condition IC=1mA IC=100µA IE=100µA VCB=20V VEB=4V IC=500mA IB=50mA VCE=2V IC=100mA VCE=10V IE= −100mA f=10MHz VCB=10V IE=0A f=1MHz IC=1.0A IB1=100mA IB2= −100mA VCC 25V ∗1 ∗2 ∗1 Non repetitive pulse ∗2 See Switching charactaristics measurement circuits zhFE RANK Q 120−270 R 180−390 zElectrical characteristic curves 1 100ms 10ms 0.1 DC 0.01 Single non repetitive Pulsed 0.001 0.1 1 10 100 Tstg Ton Tf 10 0.01 100 0.1 1 1000 100 Ta=100°C Ta=25°C Ta= −40°C 10 1 0.001 10 VCE=2V 0.01 0.1 1 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Safe Operating Area Fig.2 Switching Time Fig.3 DC Current Gain vs. Collector Current (Ι) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 100 VCE=5V VCE=3V VCE=2V 10 1 0.001 10 Ta=25°C 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.4 DC Current Gain vs. Collector Current (ΙΙ) 10 1 Ta=100°C Ta=25°C Ta= −40°C 0.1 0.01 0.001 10 IC / IB=10 / 1 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 1000 DC CURRENT GAIN : hFE SWITCHING TIME : (ns) COLLECTOR CURRENT : IC (A) 1ms Ta=25°C VCC=25V IC / IB=10 / 1 DC CURRENT GAIN : hFE 1000 10 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (Ι) 10 Ta=25°C 1 IC / IB=20 / 1 IC / IB=10 / 1 0.1 0.01 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ) 2/3 2SC5730K Transistors 1 Ta=100°C Ta=25°C Ta= −40°C 0.1 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Ta=100°C Ta=25°C Ta= −40°C 0.1 0 0.5 1 1000 Ta=25°C VCE=10V 100 10 1.5 BASE TO EMITTER VOLTAGE : VBE (V) Fig.7 Base-Emitter Saturation Voltage vs. Collecter Current 100 1 0.01 10 VCE=2V TRANSITION FREQUENCY : fT (MHz) 10 IC / IB=10 / 1 COLLECTOR CURRENT : IC (A) BASE EMITTER SATURATION VOLTAGE : VBE (sat) (V) 10 1 0.001 0.01 0.1 1 10 EMITTER CURRENT : IE (A) Fig.8 Grounded Emitter Propagation Characteristics Fig.9 Transition Frequency Ta=25°C f=1MHz 10 1 0.1 1 10 100 BASE TO COLLECTOR VOLTAGE : VCB (V) Fig.10 Collector Output Capacitance zSwitching characteristics measurement circuits RL=25Ω VIN IB1 IC VCC 25V PW IB2 PW 50 S Duty cycle ≤ 1% IB1 IB2 Base current waveform 90% IC Collector current waveform 10% Ton Tstg Tf 3/3