Medium power transistor (60V, 0.5A) 2SC5876 2.0 1.3 0.9 (1) 0.3 (3) (2) UMT3 0.65 0.65 Dimensions (Unit : mm) 0.7 Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2088 1.25 0.15 0.2 2.1 (1)Emitter (2)Base (3)Collector Applications Small signal low frequency amplifier High speed switching 0.1Min. Each lead has same dimensions Abbreviated symbol : VS Structure NPN Silicon epitaxial planar transistor Packaging specifications Package Type Taping Code T106 Basic ordering unit (pieces) 3000 2SC5876 Absolute maximum ratings (Ta=25C) Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V IC 0.5 A ICP 1.0 A PC 200 mW Tj 150 °C Tstg −55 to +150 °C Parameter Collector current Power dissipation Junction temperature Range of storage temperature ∗1 ∗2 ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land. www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ 1/3 2011.03 - Rev.B 2SC5876 Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. BVCBO 60 − − V IC=100μA Collector−emitter breakdown voltage BVCEO 60 − − V IC=1mA BVEBO 6 − − V IE=100μA ICBO − − 1.0 μA VCB=40V IEBO − − 1.0 μA VEB=4V VCE(sat) − 150 300 mV IC=100mA, IB=10mA Collector−base breakdown voltage Emitter−base breakdown voltage Collector cut-off current Emitter cut-off current Collector−emitter staturation voltage Conditions Unit DC current gain hFE 120 − 390 − Transition frequency fT − 300 − MHz Collector output capacitance Cob − 5 − pF VCB=10V, IE=0mA, f=1MHz Turn-on time ton − 70 − ns tstg − 130 − ns tf − 80 − ns IC=500mA, IB1=50mA IB2= −50mA VCC 25V ∗1 Storage time Fall time VCE=2V, IC=50mA VCE=10V, IE= −100mA, f=10MHz ∗1 ∗1 Pulse measurement hFE RANK Q R 120-270 180-390 Electrical characteristic curves 1000 1000 Ton 0.1 1 Ta= −40°C 10 1 0.001 10 Ta=25°C COLLECTOR CURRENT : IC (A) 0.01 0.1 10 1 0.001 1 1 10 Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE (sat)(V) 1 Ta=125°C 0.1 Ta=25°C 1 COLLECTOR CURRENT : IC (A) Fig.4 Collector-emitter saturation voltage vs. collector current www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ IC/IB=10/1 1 IC/IB=20/1 0.1 IC/IB=10/1 Ta= −40°C 0.1 0.1 Fig.3 DC current gain vs. collector current 10 IC/IB=10/1 0.01 0.01 COLLECTOR CURRENT : IC (A) Fig.2 DC current gain vs. collector current 10 COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) VCE=3V COLLECTOR CURRENT : IC (A) Fig.1 Switching Time 0.01 0.001 VCE=2V 100 BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) 10 0.01 100 VCE=5V DC CURRENT GAIN : hFE Tf 100 Ta=25°C Ta=125°C DC CURRENT GAIN : hFE SWITCHING TIME (ns) Tstg 1000 VCE=2V Ta=25°C VCC=25V IC/IB=10/1 0.01 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.5 Collector-emitter saturation voltage vs. collector current 2/3 Ta= −40°C 1 Ta=25°C Ta=125°C 0.1 0.01 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.6 Base-emitter saturation voltage vs. collector current 2011.03 - Rev.B Data Sheet 1000 TRANSITION FREQUENCY : FT (MHz) COLLECTOR CURRENT : IC (A) 1 Ta=125°C 0.1 Ta=25°C Ta= −40°C VCE=2V 0.01 0 0.5 1 Ta=25°C VCE=10V 100 10 1 −0.001 1.5 −0.01 BASE TO EMITTER VOLTAGE : VBE (V) Fig.7 Ground emitter propagat on characteristics −0.1 −1 −10 COLLECTOR OUTPUT CAPACITANCE : CoB (pF) 2SC5876 100 Ta=25°C f=1MHz 10 1 0.1 1 10 100 EMITTER CURRENT : IE (A) BASE TO COLLECTOR VOLTAGE : VCB (V) Fig.8 Transition frequency Fig.9 Collector output capacitance Switching characteristics measurement circuits RL=50Ω VIN IB1 IC VCC 25V PW IB2 PW 50 S Duty cycle 1% IB1 IB2 Base current waveform 90% IC Collector current waveform 10% Ton www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ Tstg Tf 3/3 2011.03 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A