ETC H5N2505DL

H5N2505DL, H5N2505DS
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1376 (Z)
Target Specification 1st. Edition
Mar. 2001
Features
• Low on-resistance
• Low drive current
• High speed switching
Outline
DPAK-2
4
4
1 2
D
3
H5N2505DS
G
1 2
3
H5N2505DL
S
1. Gate
2. Drain
3. Source
4. Drain
H5N2505DL, H5N2505DS
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
250
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
(5)
A
(20)
A
(5)
A
(20)
A
Note1
Drain peak current
ID
Body-drain diode reverse drain
current
I DR
Body-drain diode reverse drain peak
current
I DR
Channel dissipation
Pch Note2
25
W
Channel to case Thermal Impedance
θ ch-c
5
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
2
(pulse)
Note1
(pulse)
H5N2505DL, H5N2505DS
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
250
—
—
V
I D = 10 mA, VGS = 0
Gate to source leak current
I GSS
—
—
±0.1
µA
VGS = ±30 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
1
µA
VDS = 250 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
(3.0)
—
(4.5)
V
VDS = 10 V, ID = 1 mA
Forward transfer admittance
|yfs|
(2.0)
(3.3)
—
S
I D = 2.5 A, VDS = 10 V Note4
Static drain to source on state
resistance
RDS(on)
—
(0.68)
(0.89)
Input capacitance
Ciss
—
(300)
—
pF
VDS = 25 V
Output capacitance
Coss
—
(45)
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
(13)
—
pF
f = 1 MHz
Total gate charge
Qg
—
(9.8)
—
nC
VDD = 200 V
Gate to source charge
Qgs
—
(1.8)
—
nC
VGS = 10 V
Gate to drain charge
Qgd
—
(5.1)
—
nC
ID = 5 A
Turn-on delay time
td(on)
—
(18)
—
ns
I D = 2.5 A
Rise time
tr
—
(14)
—
ns
VGS = 10 V
Turn-off delay time
td(off)
—
(46)
—
ns
RL = 50
Fall time
tf
—
(11)
—
ns
Rg = 10
Body-drain diode forward
voltage
VDF
—
(1.0)
(1.5)
V
I F = 5 A, VGS = 0
Body-drain diode reverse
recovery time
trr
—
(100)
—
ns
I F = 5 A, VGS = 0
Body-drain diode reverse
recovery charge
Qrr
—
(320)
—
nC
diF/dt = 100 A/µs
Note:
I D = 2.5 A, VGS = 10 V Note4
4. Pulse measurement
3
H5N2505DL, H5N2505DS
Package Dimensions
As of January, 2001
1.7 ± 0.5
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
4.7 ± 0.5
1.2 ± 0.3
16.2 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
(0.7)
3.1 ± 0.5
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
0.55 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
4
DPAK (L)-(2)
—
—
0.42 g
H5N2505DL, H5N2505DS
As of January, 2001
2.3 ± 0.2
0.55 ± 0.1
(4.9)
(5.3)
6.5 ± 0.5
5.4 ± 0.5
1.2 Max
5.5 ± 0.5
1.7 ± 0.5
Unit: mm
0 – 0.25
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
DPAK (S)-(1),(2)
—
Conforms
0.28 g
5
H5N2505DL, H5N2505DS
As of January, 2001
(0.1)
2.3 ± 0.2
0.55 ± 0.1
(5.1)
(5.1)
(0.1)
6.5 ± 0.5
5.4 ± 0.5
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
Unit: mm
0 – 0.25
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
6
DPAK (S)-(3)
—
Conforms
0.28 g
H5N2505DL, H5N2505DS
Cautions
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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7