EUDYNA FMM5117X

FMM5117X
20-32GHz Downconverter MMIC
FEATURES
•
•
•
•
Integrated Monolithic Downconverter
High Linearity
Single Supply Voltage Operation
High Reliability
DESCRIPTION
The FMM5117X is a double, single balanced diode mixer
downconverter designed for applications in the 20 to 32GHz
frequency range. The device consists of a low noise mixer,
LO amplifier, and LO frequency doubler. This downconverter is uniquely suited for point-to-point radios,
local multi-point distribution systems (LMDS) and satellite communications, as it offers a
high dynamic range over a large bandwidth.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Parameter
DC Supply Voltage
Symbol
Rating
VDD1,2
8
Unit
V
Input Power
PinRF
20
dBm
Input Power
Storage Temperature
PinLO
Tstg
10
-65 to +175
dBm
°C
RECOMMENDED OPERATING CONDITIONS
Item
DC Supply Voltage
Input LO Power Level
Operating Backside Temperature
Symbol
Min.
VDD1,2
PinLO
Tbs
0.0
-45
Recommend
Typ.
5.0
3.0
Max.
Unit
5.0
110
V
dBm
°C
25
Note 1: This product should be hermetically packaged.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Conditions
Min.
Limits
Typ. Max.
32
GHz
Unit
RF Frequency Range
fRF
20
LO Frequency Range
fLO
9.5
-
16.5
GHz
IF Frequency Range (Note 2)
fIF
0.1
-
3
GHz
Conversion Gain
G
-18
-10
-
dB
-
5
-
dB
-
2
-
dB
Conversion Gain Flatness
(fixed fIF, swept fLO) (fIF=1.0GHz)
∆G
Conversion Gain Flatness
(fixed fLO, swept fIF) (fLO=13.5GHz)
∆G
Return Loss (RF/LO)
RLRF, RLLO
VDD1,2=5V,
VGG=0V,
PLO=3dBm,
PRF=0dBm
-
12
-
dB
RLIF
-
4
-
dB
P1dBRFIN
-
15
-
dBm
3rd Order Input Intercept Point
DC Current Consumption
IIP3
IDC
-
23
100
150
dBm
mA
RF Current Consumption
IRF
-
140
200
mA
Return Loss (IF)
Input P1dB at RF Port
Note 1: The electrical characteristics are measured on a sample basis at 10pcs./wafer. Criteria: (accept/reject)=(0/1)
Note 2: The IF frequency range is dependent on the selected LO and RF frequency.
Edition 1.3
May 2003
FMM5117X
20-32GHz Downconverter MMIC
CONVERSION GAIN (LSB) vs. FREQUENCY
Conversion Gain (LSB) (dB)
-4
VDD1,2=5V,
PLO=3dBm,
PRF=0dBm
fIF=1GHz
fIF=2GHz
-2
fIF=3GHz
-4
Conversion Gain (USB) (dB)
-2
CONVERSION GAIN (USB) vs. FREQUENCY
-6
-8
-10
-12
-14
-8
-10
-12
-14
-16
-18
-18
18
20
22
24
26
28
30
32
34
fIF=3GHz
-6
-16
-20
fIF=1GHz
fIF=2GHz
VDD1,2=5V,
PLO=3dBm,
PRF=0dBm
-20
36
18
20
22
2 x LO Frequency (GHz)
26
28
30
32
34
IM3 vs. FREQUENCY
2xLO OUTPUT POWER vs. FREQUENCY
30
0
VDD1,2=5V
PLO=3dBm,
PRF=0dBm,
fIF=1GHz,
IIP3
20
IM3 Suppression (dBc) / IIP3 (dBm)
-5
2x LO Output Power (dBm)@RF Port
24
2 x LO Frequency (GHz)
-10
-15
-20
-25
-30
10
0
VDD1,2=5V,
fIF=1GHz
-10
∆f=10MHz
-20
PLO=3dBm,
PRF=0dBm,
-30
-40
IM3
-35
-50
-40
9
10
11
12
13
14
15
16
17
-60
9
11
LO Frequency (GHz)
13
15
LO Frequency (GHz)
RF RETURN LOSS vs. FREQUENCY
IF RETURN LOSS vs. FREQUENCY
RF Return Loss; fIF=1GHz
fLO=13GHz
-5
-10
IF Return Loss (dB)
RF Return Loss (dB)
-2
-15
-20
-4
-6
-8
-25
20
22
24
26
28
RF Frequency (GHz)
30
32
0.5
1
1.5
2
2.5
IF Frequency (GHz)
3
3.5
4
36
FMM5117X
20-32GHz Downconverter MMIC
BONDING DIAGRAM
VDD1,2=5V
C=220pF
LO
RF
VGG=GND
IF
FUNCTIONAL DIAGRAM
IF OUT
RF IN
X2
LO IN
FMM5117X
20-32GHz Downconverter MMIC
CHIP OUTLINE
VDD1
VDD2
Unit: µm
2260
2045
LO
1775
1690
RF
Chip Size: 3.085mm x 2.26mm
Chip Thickness: 110µm (Typ.)
Pad Dimensions: 1. RF: 80 x 160µm
2. VDD1: 80 x 80µm
3. VDD2: 100 x 100µm
4. LO: 80 x 160µm
5. VGG: 100 x 100µm
6. IF: 80 x 120µm
VGG
460
190
0
IF
0190
1195
2135 2300
2865 3085
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
FUJITSU QUANTUM DEVICES
SINGAPORE PTE LTD.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui,
Kowloon, Hong Kong
TEL: +852-23770226
FAX: +852-23763269
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder,
or liquid through burning, crushing, or chemical processing
as these by-products are dangerous to the human body
if inhaled, ingested, or swallowed.
• Observe government laws and company regulations
when discarding this product. This product must be
discarded in accordance with methods specified
by applicable hazardous waste procedures.
FUJITSU QUANTUM DEVICES LIMITED
Business Development Division
11th Floor, Hachioji Daiichi-Seimei Bldg.
3-20-6 Myojin-cho
Hachioji-city, Tokyo 192-0046, Japan
TEL: +81-426-43-5885
FAX: +81-426-43-5582
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0502M200