ETC XN0421L

Composite Transistors
XN0421L (XN421L)
Silicon NPN epitaxial planer transistor
Unit: mm
For switching/digital circuits
+0.2
2.8 –0.3
+0.25
■ Absolute Maximum Ratings
Parameter
Collector to base voltage
Rating
Collector to emitter voltage
of
element Collector current
+0.1
+0.1
0 to 0.05
0.4±0.2
(Ta=25˚C)
Symbol
Ratings
Unit
VCBO
50
V
50
V
IC
100
mA
Total power dissipation
PT
300
mW
Overall Junction temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: DI
Internal Connection
6
Tr1
5
4
■ Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
1.45±0.1
3
0.16–0.06
0.95
4
0.1 to 0.3
VCEO
Storage temperature
2
0.95
+0.1
UNR121L(UN121L) × 2 elements
5
0.8
+0.2
■ Basic Part Number of Element
●
1.9±0.1
2.9 –0.05
+0.2
●
Two elements incorporated into one package.
(Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half.
1.1–0.1
●
0.65±0.15
1
6
0.5 –0.05
■ Features
1.5 –0.05
0.3 –0.05
0.65±0.15
1
2
Tr2
3
(Ta=25˚C)
Symbol
Conditions
min
VCBO
IC = 10µA, IE = 0
50
50
typ
max
Unit
V
VCEO
IC = 2mA, IB = 0
ICBO
VCB = 50V, IE = 0
0.1
ICEO
VCE = 50V, IB = 0
0.5
µA
IEBO
VEB = 6V, IC = 0
2.0
mA
Forward current transfer ratio
hFE
VCE = 10V, IC = 5mA
Collector to emitter saturation voltage
VCE(sat)
IC = 10mA, IB = 0.3mA
0.25
V
Output voltage high level
VOH
VCC = 5V, VB = 0.5V, RL = 1kΩ
Output voltage low level
VOL
VCC = 5V, VB = 2.5V, RL = 1kΩ
Collector cutoff current
Emitter cutoff current
Input resistance
R1
Resistance ratio
R1/R2
Transition frequency
fT
VCB = 10V, IE = –2mA, f = 200MHz
V
µA
20
4.9
V
0.2
V
kΩ
–30%
4.7
+30%
0.8
1.0
1.2
150
MHz
Note.) The Part number in the Parenthesis shows conventional part number.
1
Composite Transistors
XN0421L
PT — Ta
Total power dissipation PT (mW)
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (˚C)
IC — VCE
VCE(sat) — IC
240
Collector current IC (mA)
200
160
IB=1.0mA
0.8mA
120
0.6mA
80
0.4mA
40
0.2mA
0
IC/IB=10
10
1
Ta=75˚C
25˚C
0.1
–25˚C
0.01
0
2
4
6
8
10
Collector to emitter voltage VCE
12
3
30
100
Collector current IC
1000
4
3
2
10
1
0.1
1
0
1
3
10
Collector to base voltage
30
100
VCB (V)
200
Ta=75˚C
160
25˚C
120
–25˚C
80
40
0.01
0.1
0.3
1
3
10
30
Output current IO (mA)
1
3
10
30
100
300
Collector current IC (mA)
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
5
300
(mA)
IO — VIN
Input voltage VIN (V)
Collector output capacitance Cob (pF)
10
100
6
VCE=10V
0
1
(V)
Cob — VCB
2
hFE — IC
240
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
100
100
1000
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2001 MAR