1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes. http://onsemi.com • Extremely Low VF • Low Power Loss/High Efficiency • Low Stored Charge, Majority Carrier Conduction SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.1 gram (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16″ from case • Shipped in plastic bags, 500 per bag • Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the part number • Polarity: Cathode indicated by Polarity Band • Marking: 1N5820, 1N5821, 1N5822 AXIAL LEAD CASE 267–03 STYLE 1 MAXIMUM RATINGS Please See the Table on the Following Page MARKING DIAGRAM 1N582x 1N582x = Device Code x = 0, 1 or 2 ORDERING INFORMATION Device Package Shipping 1N5820 Axial Lead 500 Units/Bag 1N5820RL Axial Lead 1500/Tape & Reel 1N5821 Axial Lead 500 Units/Bag 1N5821RL Axial Lead 1500/Tape & Reel 1N5822 Axial Lead 500 Units/Bag 1N5822RL Axial Lead 1500/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 – Rev. 3 1 Publication Order Number: 1N5820/D 1N5820, 1N5821, 1N5822 MAXIMUM RATINGS Symbol 1N5820 1N5821 1N5822 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 20 30 40 V Non–Repetitive Peak Reverse Voltage VRSM 24 36 48 V VR(RMS) 14 21 28 V RMS Reverse Voltage Average Rectified Forward Current (Note 1.) VR(equiv) 0.2 VR(dc), TL = 95°C (RθJA = 28°C/W, P.C. Board Mounting, see Note 5.) IO Ambient Temperature Rated VR(dc), PF(AV) = 0 RθJA = 28°C/W TA Non–Repetitive Peak Surge Current (Surge applied at rated load conditions, half wave, single phase 60 Hz, TL = 75°C) Operating and Storage Junction Temperature Range (Reverse Voltage applied) Peak Operating Junction Temperature (Forward Current applied) 3.0 90 85 A 80 °C IFSM 80 (for one cycle) A TJ, Tstg 65 to +125 °C TJ(pk) 150 °C *THERMAL CHARACTERISTICS (Note 5.) Characteristic Thermal Resistance, Junction to Ambient Symbol Max Unit RθJA 28 °C/W Unit *ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 1.) Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 2.) (iF = 1.0 Amp) (iF = 3.0 Amp) (iF = 9.4 Amp) VF Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2.) TL = 25°C TL = 100°C iR 1N5820 1N5821 1N5822 0.370 0.475 0.850 0.380 0.500 0.900 0.390 0.525 0.950 V mA 2.0 20 1. Lead Temperature reference is cathode lead 1/32″ from case. 2. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%. *Indicates JEDEC Registered Data for 1N5820–22. http://onsemi.com 2 2.0 20 2.0 20 1N5820, 1N5821, 1N5822 NOTE 3. — DETERMINING MAXIMUM RATINGS use in common rectifier circuits, Table 1. indicates suggested factors for an equivalent dc voltage to use for conservative design, that is: VR(equiv) = V(FM) F (4) The factor F is derived by considering the properties of the various rectifier circuits and the reverse characteristics of Schottky diodes. Reverse power dissipation and the possibility of thermal runaway must be considered when operating this rectifier at reverse voltages above 0.1 VRWM. Proper derating may be accomplished by use of equation (1). TA(max) = TJ(max) RθJAPF(AV) RθJAPR(AV)(1) where TA(max) = Maximum allowable ambient temperature TJ(max) = Maximum allowable junction temperature (125°C or the temperature at which thermal runaway occurs, whichever is lowest) PF(AV) = Average forward power dissipation PR(AV) = Average reverse power dissipation RθJA = Junction–to–ambient thermal resistance EXAMPLE: Find TA(max) for 1N5821 operated in a 12–volt dc supply using a bridge circuit with capacitive filter such that IDC = 2.0 A (IF(AV) = 1.0 A), I(FM)/I(AV) = 10, Input Voltage = 10 V(rms), RθJA = 40°C/W. Step 1. Find VR(equiv). Read F = 0.65 from Table 1. , Figures 1, 2, and 3 permit easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The figures solve for a reference temperature as determined by equation (2). TR = TJ(max) RθJAPR(AV) VR(equiv) = (1.41) (10) (0.65) = 9.2 V. Step 2. Find TR from Figure 2. Read TR = 108°C @ VR = 9.2 V and RθJA = 40°C/W. Step 3. Find PF(AV) from Figure 6. **Read PF(AV) = 0.85 W (2) Substituting equation (2) into equation (1) yields: @ TA(max) = TR RθJAPF(AV) (3) I (FM) 10 and I F(AV) 1.0 A. I (AV) Step 4. Find TA(max) from equation (3). TA(max) = 108 (0.85) (40) = 74°C. Inspection of equations (2) and (3) reveals that TR is the ambient temperature at which thermal runaway occurs or where TJ = 125°C, when forward power is zero. The transition from one boundary condition to the other is evident on the curves of Figures 1, 2, and 3 as a difference in the rate of change of the slope in the vicinity of 115°C. The data of Figures 1, 2, and 3 is based upon dc conditions. For **Values given are for the 1N5821. Power is slightly lower for the 1N5820 because of its lower forward voltage, and higher for the 1N5822. Variations will be similar for the MBR–prefix devices, using PF(AV) from Figure 6. Table 1. Values for Factor F Circuit Half Wave Full Wave, Bridge Full Wave, Center Tapped*† Load Resistive Capacitive* Resistive Capacitive Resistive Capacitive Sine Wave 0.5 1.3 0.5 0.65 1.0 1.3 Square Wave 0.75 1.5 0.75 0.75 1.5 1.5 *Note that VR(PK) 2.0 Vin(PK). †Use line to center tap voltage for Vin. http://onsemi.com 3 1N5820, 1N5821, 1N5822 20 125 15 10 115 105 TR , REFERENCE TEMPERATURE (° C) TR , REFERENCE TEMPERATURE (° C) 125 8.0 RJA (°C/W) = 70 50 95 40 28 85 75 2.0 3.0 4.0 5.0 7.0 15 10 R JL , THERMAL RESISTANCE JUNCTION-TO-LEAD (° C/W) TR , REFERENCE TEMPERATURE (° C) 40 28 85 3.0 4.0 5.0 7.0 15 10 30 20 10 8.0 RJA (°C/W) = 70 40 85 7.0 10 30 25 20 15 10 BOTH LEADS TO HEAT SINK, EQUAL LENGTH 5.0 28 5.0 MAXIMUM TYPICAL 35 15 75 4.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 50 95 40 50 15 20 30 0 40 0 1/8 2/8 3/8 4/8 5/8 6/8 7/8 VR, REVERSE VOLTAGE (VOLTS) L, LEAD LENGTH (INCHES) Figure 3. Maximum Reference Temperature 1N5822 Figure 4. Steady–State Thermal Resistance The temperature of the lead should be measured using a ther mocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured val ue of TL, the junction temperature may be determined by: TJ = TL + TJL 1.0 LEAD LENGTH = 1/4″ Ppk tp Ppk TIME t1 DUTY CYCLE = tp/t1 PEAK POWER, Ppk, is peak of an equivalent square power pulse. ∆TJL = Ppk • RθJL [D + (1 - D) • r(t1 + tp) + r(tp) - r(t1)] where: ∆TJL = the increase in junction temperature above the lead temperature. r(t) = normalized value of transient thermal resistance at time, t, i.e.: r(t1 + tp) = normalized value of transient thermal resistance at time t1 + tp, etc. 0.05 0.03 0.02 0.01 RJA (°C/W) = 70 Figure 2. Maximum Reference Temperature 1N5821 95 0.1 105 Figure 1. Maximum Reference Temperature 1N5820 105 0.2 8.0 VR, REVERSE VOLTAGE (VOLTS) 20 0.3 10 VR, REVERSE VOLTAGE (VOLTS) 115 0.5 15 115 75 20 125 1.0 20 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 Figure 5. Thermal Response http://onsemi.com 4 500 1.0 k 2.0 k 5.0 k 10 k 20 k PF(AV) , AVERAGE POWER DISSIPATION (WATTS) 1N5820, 1N5821, 1N5822 10 7.0 5.0 NOTE 4. – APPROXIMATE THERMAL CIRCUIT MODEL SINE WAVE I (FM) (ResistiveLoad) I (AV) 3.0 2.0 1.0 0.7 0.5 Capacitive Loads RθS(A) 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IF(AV), AVERAGE FORWARD CURRENT (AMP) Figure 6. Forward Power Dissipation 1N5820–22 TC(A) TJ Mounting Method 1 P.C. Board where available copper surface is small. NOTE 5. — MOUNTING DATA Data shown for thermal resistance junction–to–ambient (RθJA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RθJA IN STILL AIR TC(K) TL(K) 1/8 1/4 1/2 3/4 RθJA 1 50 51 53 55 °C/W 2 58 59 61 63 °C/W 28 É ÉÉÉÉÉÉÉ É ÉÉÉÉÉÉÉ É É É ÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉ L L Mounting Method 3 P.C. Board with 2–1/2″ x 2–1/2″ copper surface. L = 1/2″ Mounting Method 2 Lead Length, L (in) Mounting Method 3 TA(K) Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heat sink. Terms in the model signify: TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature RθS = Thermal Resistance, Heat Sink to Ambient RθL = Thermal Resistance, Lead to Heat Sink RθJ = Thermal Resistance, Junction to Case PD = Total Power Dissipation = PF + PR PF = Forward Power Dissipation PR = Reverse Power Dissipation (Subscripts (A) and (K) refer to anode and cathode sides, respectively.) Values for thermal resistance components are: RθL = 42°C/W/in typically and 48°C/W/in maximum RθJ = 10°C/W typically and 16°C/W maximum The maximum lead temperature may be found as follows: TL = TJ(max) TJL where TJL RθJL · PD TJ ≈ 125°C 0.2 RθS(K) SQUARE WAVE 0.2 0.1 RθL(K) RθJ(K) PD TL(A) 5.0 10 20 RθJ(A) TA(A) dc 0.3 0.1 RθL(A) L L VECTOR PUSH-IN TERMINALS T-28 °C/W http://onsemi.com 5 BOARD GROUND PLANE 1N5820, 1N5821, 1N5822 100 IFSM , PEAK HALF-WAVE CURRENT (AMP) 50 30 20 TJ = 100°C 7.0 5.0 25°C 3.0 50 TL = 75°C f = 60 Hz 30 20 1 CYCLE SURGE APPLIED AT RATED LOAD CONDITIONS 10 2.0 1.0 2.0 20 5.0 7.0 10 30 50 70 100 Figure 8. Maximum Non–Repetitive Surge Current 1.0 100 0.7 50 0.5 20 TJ = 125°C 10 0.3 0.2 0.1 0.07 0.05 3.0 NUMBER OF CYCLES IR , REVERSE CURRENT (mA) i F, INSTANTANEOUS FORWARD CURRENT (AMP) 10 70 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 100°C 5.0 2.0 75°C 1.0 0.5 0.2 25°C 0.1 0.05 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 1N5820 1N5821 1N5822 0.02 Figure 7. Typical Forward Voltage 0.01 4.0 0 8.0 12 16 20 24 28 32 36 40 VR, REVERSE VOLTAGE (VOLTS) C, CAPACITANCE (pF) 500 Figure 9. Typical Reverse Current 1N5820 300 NOTE 6. — HIGH FREQUENCY OPERATION 200 1N5821 TJ = 25°C f = 1.0 MHz Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 10.) 100 1N5822 70 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) Figure 10. Typical Capacitance http://onsemi.com 6 1N5820, 1N5821, 1N5822 PACKAGE DIMENSIONS AXIAL LEAD CASE 267–03 ISSUE G K D A 1 2 B K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B D K INCHES MIN MAX 0.370 0.380 0.190 0.210 0.048 0.052 1.000 --- MILLIMETERS MIN MAX 9.40 9.65 4.83 5.33 1.22 1.32 25.40 --- STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE http://onsemi.com 7 1N5820, 1N5821, 1N5822 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada N. American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET) Email: ONlit–[email protected] French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET) Email: ONlit–[email protected] English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT) Email: [email protected] CENTRAL/SOUTH AMERICA: Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) Email: ONlit–[email protected] Toll–Free from Mexico: Dial 01–800–288–2872 for Access – then Dial 866–297–9322 ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001–800–4422–3781 Email: ONlit–[email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 *Available from Germany, France, Italy, UK, Ireland For additional information, please contact your local Sales Representative. http://onsemi.com 8 1N5820/D