2SA1755 Silicon PNP Epitaxial Application TO-92MOD. High speed switching Table 1 Ordering Information Type No. hFE1 ———————————————————— 2SA1755B 50 to 100 ———————————————————— 2SA1755C 80 to 160 ———————————————————— 3 2 1 1. Emitter 2. Collector 3. Base Table 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Collector to base voltage VCBO –100 V ——————————————————————————————————————————— Collector to emitter voltage VCEO –80 V ——————————————————————————————————————————— Emitter to base voltage VEBO –5 V ——————————————————————————————————————————— Collector current IC –0.7 A ——————————————————————————————————————————— Collector power dissipation PC 0.9 W ——————————————————————————————————————————— Junction temperature Tj 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— 2SA1755 Table 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Collector to base breakdown voltage V(BR)CBO –100 — — V IC = –10 µA, IE = 0 ——————————————————————————————————————————— Collector to Emitter breakdown voltage V(BR)CEO –80 — — V IC = –5mA, RBE = ∞ ——————————————————————————————————————————— Emitter to base breakdown voltage V(BR)EBO –5 — — V IE = –10 µA, IC = 0 ——————————————————————————————————————————— Collector cutoff current ICBO — — –1.0 µA VCB = –30 V, IE = 0 ——————————————————————————————————————————— Emitter cutoff current IEBO — — –1.0 µA VEB = –3 V, IE = 0 ——————————————————————————————————————————— DC current transfer ratio 2SA1755B hFE1 50 — 100 —————— ————————— 2SA1755C 80 — VCE = –4 V, IC = –50 mA 160 ——————————————————————————————————————————— DC current transfer ratio hFE2 20 — — VCE = –4 V, IC = –400 mA ——————————————————————————————————————————— Collector to emitter saturation voltage VCE(sat) — — –0.5 V IC = –150 mA, IB = –15 mA ——————————————————————————————————————————— Base to emitter saturation voltage VBE(sat) — — –1.1 V IC = –150 mA, IB = –15 mA ——————————————————————————————————————————— Collector output capacitance Cob — — 35 pF VCB = –10 V IE = 0 f = 1 MHz ——————————————————————————————————————————— High frequency AC current transfer ratio hfe 1.0 — — VCE = –10 V, IC = –20 mA f = 100 MHz ——————————————————————————————————————————— Turn on time ton — — 60 ns VCC = –6.5 V IC = 10 IB1 = –150 mA IB2 = 0 ——————————————————————————————————————————— Turn off time toff — — 400 ns VCC = –6.5 V IC = 10 IB1 = –10 IB2 = –150 mA ——————————————————————————————————————————— Storage time tstg — — 350 ns VCC = –6.5 V IC = 10 IB1 = –10 IB2 = –150 mA ———————————————————————————————————————————