DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2513, 2SK2513-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2513, 2SK2513-Z is N-Channel MOS Field Effect Tran- (in millimeters) • Low On-Resistance 3.6 ± 0.2 RDS(on)2 = 23 mΩ (VGS = 4 V, ID = 23 A) 4 6.0 MAX. 1 2 3 1.3 ± 0.2 0.75 ± 0.1 2.54 2.8 ± 0.2 2.54 Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±45 A Drain Current (pulse)* ID(pulse) ±180 A Total Power Dissipation (Tc = 25 ˚C) PT1 75 W Total Power Dissipation (TA = 25 ˚C) PT2 1.5 W (10.0) Channel Temperature Tch 150 ˚C 4 Storage Temperature Tstg 4.8 MAX. 1.3 ± 0.2 1.5 MAX. –55 to +150 ˚C PW ≤ 10 µs, Duty Cycle ≤ 1 % 1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB MP-25 (TO-220) 1.0 ± 0.5 * 0.5 ± 0.2 8.5 ± 0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) 1.3 ± 0.2 10.0 RDS(on)1 = 15 mΩ (VGS = 10 V, ID = 23 A) • Low Ciss Ciss = 2 100 pF TYP. • Built-in G-S Protection Diode 4.8 MAX. 10.6 MAX. 5.9 MIN. FEATURES 12.7 MIN. 15.5 MAX. 3.0 ± 0.3 sistor designed for high current switching applications. 1.4 ± 0.2 (2.54) (2.54) 2.8 ± 0.2 1 2 3 1.1 ± 0.4 3.0 ± 0.5 1.0 ± 0.3 R) ) .5 R (0 0.8 ( 1. 2. 3. 4. 0.5 ± 0.2 Gate Drain Source Fin (Drain) MP-25Z (SURFACE MOUNT TYPE) Drain Body Diode The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Document No. D10292EJ1V0DS00 (1st edition) Date Published August 1995 P Printed in Japan Gate Gate Protection Diode Source © 1995 2SK2513, 2SK2513-Z ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL Drain to Source On-State Resistance MIN. TYP. RDS(on)1 MAX. UNIT 15 mΩ VGS = 10 V, ID = 23 A 16 23 mΩ VGS = 4 V, ID = 23 A 2.0 V VDS = 10 V, ID = 1 mA S VDS = 10 V, ID = 23 A 10 µA VDS = VDSS, VGS = 0 ±10 µA VGS = ±20 V, VDS = 0 11 Drain to Source On-State Resistance RDS(on)2 Gate to Source Cutoff Voltage VGS(off) 1.0 1.5 Forward Transfer Admittance | yfs | 15 20 Drain Leakage Current IDSS TEST CONDITIONS Gate to Source Leakage Current IGSS Input Capacitance Ciss 2 100 pF VDS = 10 V Output Capacitance Coss 1 100 pF VGS = 0 Reverse Transfer Capacitance Crss 500 pF f = 1 MHz Turn-On Delay Time td(on) 45 ns ID = 23 A Rise Time tr 380 ns VGS(on) = 10 V Turn-Off Delay Time td(off) 320 ns VDD = 30 V Fall Time tf 320 ns RG = 10 Ω Total Gate Charge QG 100 nC ID = 45 A Gate to Source Charge QGS 7 nC VDD = 48 V Gate to Drain Charge QGD 40 nC VGS = 10 V Body Diode Forward Voltage VF(S-D) 1.0 V IF = 45 A, VGS = 0 Reverse Recovery Time trr 100 ns IF = 45 A, VGS = 0 Reverse Recovery Charge Qrr 180 nC di/dt = 100 A/µs Test Circuit 1 Switching Time Test Circuit 2 Gate Charge D.U.T. IG = 2 mA D.U.T. VGS RL RG RG = 10 Ω PG. VGS Wave Form 0 VGS (on) 10 % 90 % PG. VDD 50 Ω RL VDD 90 % ID 90 % ID VGS 0 I D Wave Form t t = 1 µs Duty Cycle ≤ 1 % 0 10 % 10 % td (on) tr ton td (off) tf toff The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2513, 2SK2513-Z TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 140 100 80 60 40 20 0 20 40 60 80 120 100 80 60 40 20 0 100 120 140 160 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 1 000 Pulsed PW d 100 ite m n) Li ID(DC) 1 (o DS R 10 TC = 25 ˚C Single Pulse 1 0.1 1 10 0 m s s m 20 0 DC ms 10 = µ ID - Drain Current - A ID(pulse) ID - Drain Current - A 200 s 10 100 VGS = 20 V VGS = 10 V VGS = 4 V 100 0 1 2 3 4 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 1 000 Pulsed 100 TA = 125 ˚C 75 ˚C 25 ˚C 10 –25 ˚C VDS = 10 V 1 0 2 4 6 8 VGS - Gate to Source Voltage - V 3 2SK2513, 2SK2513-Z TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1 000 Rth(ch-a) = 83.3 ˚C/W 100 10 1 Rth(ch-c) = 1.67 ˚C/W 0.1 0.01 Single Pulse 0.001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1 000 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS = 10 V Pulsed TA = –25 ˚C 25 ˚C 75 ˚C 125 ˚C 10 1 1 10 100 1 000 RDS(on) - Drain to Source On-State Resistance - mΩ ID - Drain Current - A 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 60 ID = 23 A 40 20 0 80 Pulsed 60 40 VGS = 4 V 20 VGS = 10 V 0 1 10 ID - Drain Current - A 100 20 10 30 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cutoff Voltage - V | yfs | - Forward Transfer Admittance - S 1 000 RDS(on) - Drain to Source On-State Resistance - mΩ PW - Pulse Width - s VDS = 10 V ID = 1 mA 2 1 0 –50 0 50 100 Tch - Channel Temperature - ˚C 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed 30 VGS = 4 V 20 VGS = 10 V 10 –50 1 VGS = 0 V 0.1 0 50 100 0 150 0.5 1.5 1.0 Tch - Channel Temperature - ˚C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS VGS = 0 f = 1 MHz 10 000 Ciss Coss 1 000 Crss 1 10 1 000 100 td(off) tf 100 tr td(on) 10 1.0 0.1 VDD = 30 V VGS = 10 V RG = 10 Ω 10 100 1.0 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1 000 di/dt = 100 A/µ s VGS = 0 100 10 1.0 10 ID - Drain Current - A 100 16 80 ID = 45 A VDS - Drain to Source Voltage - V trr - Reverse Recovery time - ns 10 14 12 60 VDS 40 VGS - Gate to Source Voltage - V 0 1.0 0.1 100 ID = 23 A 100 000 Ciss, Coss, Crss - Capacitance - pF ISD - Diode Forward Current - A 40 100 0.1 SOURCE TO DRAIN DIODE FORWARD VOLTAGE td(on), tr, td(off), tf - Switching Time - ns RDS(on) - Drain to Source On-State Resistance - mΩ 2SK2513, 2SK2513-Z VGS VDD = 12 V 30 V 48 V 10 8 6 20 4 2 0 40 80 120 0 160 Qg - Gate Charge - nC 5 2SK2513, 2SK2513-Z REFERENCE Document Name 6 Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 Power MOS FET features and application switching power supply. TEA-1034 Application circuits using Power MOS FET. TEA-1035 Safe operating area of Power MOS FET. TEA-1037 2SK2513, 2SK2513-Z [MEMO] 7 2SK2513, 2SK2513-Z No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 8